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MJL0281A

Onsemi

MJL0281A by Onsemi

The Onsemi MJL0281A is a NPN BJT transistor with max. Vce of 260V and Ic of 15A. It has hFE of 75, suitable for amplifier applications. The package style is flange mount with through-hole terminals, made of silicon material for high performance.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 8,172 parts In-Stock

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Digiode

USA . 1,341 parts In-Stock

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AZTECH Wire

Italy . 941 parts In-Stock

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$18.880

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941

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QUARKTWIN TECHNOLOGY LTD

USA . 12,937 parts In-Stock

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Problanco Electronics

Mexico . 5,009 parts In-Stock

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TANS Electronics

Latvia . 2,458 parts In-Stock

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SupplyDigital Components

Austria . 1,914 parts In-Stock

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Corphita

USA . 1,161 parts In-Stock

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UHIMA Technologies

Türkiye . 857 parts In-Stock

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Kulean Microsystems

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Corohmni

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Overview

Unleash the power of innovation with the MJL0281A by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor (BJT) is designed to amplify signals with unparalleled efficiency. From its NPN polarity to its 15 A maximum collector current, this transistor is a game-changer in the world of amplifiers. With a flange mount package style and through-hole terminal form, the MJL0281A offers seamless integration and exceptional performance. Elevate your projects to new heights with the reliability and value that Onsemi brings to the table. Step into a world of limitless possibilities with the MJL0281A by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for high current amplification, making it suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into different systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and handling, making it convenient for use in various projects.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, ensuring reliable operation.

No. of Terminals: 3

Having 3 terminals allows for flexible circuit connections and potential for various circuit configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in a system.

Minimum DC Current Gain (hFE): 75

High minimum DC current gain ensures consistent and stable amplification of signals.

Maximum Collector-Emitter Voltage: 260 V

High maximum collector-emitter voltage rating allows for handling high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor in various operating conditions.

Maximum Collector Current (IC): 15 A

High maximum collector current rating allows for handling significant amounts of current, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection process, enhancing overall ease of use.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures the solder joints are properly formed during assembly for reliability.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency allows for fast switching speed and high-frequency operation, suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL0281A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL0281A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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