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MJL0302AG

Onsemi

MJL0302AG by Onsemi

The Onsemi MJL0302AG is a PNP BJT transistor with max. collector-emitter voltage of 260V and max. collector current of 15A. Ideal for amplifier applications, it has a min DC current gain of 75 and nominal transition frequency of 30MHz. Package style: Flange mount, terminal form: Through-hole, and package shape: Rectangular.

Median Price

$2.513

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,516 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.600

10k+ parts

$2.600

2,516

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-

$2.600

$2.600

Rochester

USA . 2,394 parts In-Stock

1+ parts

-

100+ parts

$2.240

1k+ parts

$2.010

10k+ parts

$1.890

2,394

-

$2.240

$2.010

$1.890

Verical

USA . 2,394 parts In-Stock

1+ parts

-

100+ parts

-

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$2.513

10k+ parts

$2.362

2,394

-

-

$2.513

$2.362

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 451 parts In-Stock

1+ parts

$2.375

100+ parts

-

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451

$2.375

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Vyrian

USA . 2,494 parts In-Stock

1+ parts

$2.500

100+ parts

-

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2,494

$2.500

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Electronics Depot

USA . 6 parts In-Stock

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6

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.771

100+ parts

$1.612

1k+ parts

$1.452

10k+ parts

-

500

$1.771

$1.612

$1.452

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Ampacity Inc.

Singapore . 2,265 parts In-Stock

1+ parts

$2.130

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2,265

$2.130

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Corphita

USA . 408 parts In-Stock

1+ parts

$2.250

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408

$2.250

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Corohmni

South Africa . 358 parts In-Stock

1+ parts

$2.500

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358

$2.500

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Microchip USA

USA . 237 parts In-Stock

1+ parts

$15.600

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237

$15.600

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QUARKTWIN TECHNOLOGY LTD

USA . 22,094 parts In-Stock

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Kulean Microsystems

USA . 6,586 parts In-Stock

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6,586

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SupplyDigital Components

Austria . 6,008 parts In-Stock

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Problanco Electronics

Mexico . 5,753 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 3,981 parts In-Stock

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3,981

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Continental Prestige Electronics

USA . 2,516 parts In-Stock

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$2.260

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2,516

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$2.260

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UHIMA Technologies

Türkiye . 400 parts In-Stock

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400

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Perfect Parts

USA . 17 parts In-Stock

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17

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Overview

Unleash the power of innovation with the Onsemi MJL0302AG Power BJT transistor. Manufactured by industry leader Onsemi, this PNP transistor is designed for amplification applications, providing reliable performance and efficiency. Its plastic/epoxy package and flange mount style ensure durability and easy installation. With a maximum collector-emitter voltage of 260V and a maximum collector current of 15A, this transistor offers unparalleled value and versatility for your electronic projects. Upgrade your design with the MJL0302AG and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good electrical insulation and thermal conductivity, enhancing the reliability and performance of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can allow for higher current flow compared to NPN transistors.

Configuration: SINGLE

Single configuration transistors are easier to work with and troubleshoot, making them a good choice for applications where simplicity is key.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, this transistor is optimized for signal processing and audio applications.

Package Shape: RECTANGULAR

Rectangular packages are easy to handle and mount onto circuit boards, offering convenience during installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making it suitable for applications that require stability.

No. of Terminals: 3

Having 3 terminals allows for precise control over the transistor's function, making it versatile for various circuit configurations.

Maximum Collector-Emitter Voltage: 260 V

With a high maximum voltage rating, this transistor is suitable for applications that require handling high voltages safely.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL0302AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL0302AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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