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MJL0281AG

Onsemi

MJL0281AG by Onsemi

The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.

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3

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1k+

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Vyrian

USA . 2,960 parts In-Stock

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Digiode

USA . 1,463 parts In-Stock

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Electronics Depot

USA . 42 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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$2.309

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$2.101

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$1.893

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870

$2.309

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AZTECH Wire

Italy . 220 parts In-Stock

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$12.500

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Component Stockers USA

USA . 238 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,092 parts In-Stock

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Problanco Electronics

Mexico . 7,795 parts In-Stock

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TANS Electronics

Latvia . 7,564 parts In-Stock

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Kulean Microsystems

USA . 5,804 parts In-Stock

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SupplyDigital Components

Austria . 3,217 parts In-Stock

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Corphita

USA . 1,402 parts In-Stock

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UHIMA Technologies

Türkiye . 621 parts In-Stock

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Corohmni

South Africa . 319 parts In-Stock

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Overview

Upgrade your amplifier with the Onsemi MJL0281AG Power Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers reliable performance and high-quality construction. Ideal for amplifier applications, this transistor provides a maximum collector-emitter voltage of 260V and a maximum collector current of 15A. With a minimum DC current gain of 75 and a nominal transition frequency of 30 MHz, the MJL0281AG delivers exceptional value and benefits to customers seeking superior audio quality and efficiency in their designs. Trust Onsemi for premium components that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and thermal stability, making the product durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and low noise performance.

Configuration: SINGLE

Simplifies circuit design and integration, suitable for applications where only one transistor is needed.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance and efficiency in amplification tasks.

Package Shape: RECTANGULAR

Allows for easy mounting and soldering onto PCBs, facilitating efficient manufacturing and assembly processes.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections between the transistor and external circuitry, ensuring stable operation under varying conditions.

No. of Terminals: 3

Provides necessary connections for collector, base, and emitter terminals, supporting proper functioning of the transistor in the circuit.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting on a flange, enhancing heat dissipation and reducing thermal resistance for improved performance.

Minimum DC Current Gain (hFE): 75

Ensures consistent and reliable amplification of input signals, maintaining signal integrity and fidelity in amplifier applications.

Maximum Collector-Emitter Voltage: 260 V

Supports high-voltage operation, allowing the transistor to handle a wide range of input voltages in various applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability, low leakage, and excellent performance characteristics, making them a preferred choice for many applications.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads, making the transistor suitable for power amplification and switching applications that require high output currents.

Terminal Finish: TIN

Provides good solderability and corrosion resistance, ensuring robust connections and long-term reliability in various operating environments.

Terminal Position: SINGLE

Simplifies circuit layout and connection, ensuring easy integration into existing designs and compatibility with standard PCB configurations.

Nominal Transition Frequency (fT): 30 MHz

Indicates the maximum frequency at which the transistor can amplify signals effectively, suitable for applications that require high-speed operation and frequency response.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL0281AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

260 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL0281AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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