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TIP41AG

Onsemi

TIP41AG by Onsemi

TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,834 parts In-Stock

1+ parts

$0.360

100+ parts

$0.350

1k+ parts

$0.350

10k+ parts

-

6,834

$0.360

$0.350

$0.350

-

Chip1Stop

Japan . 1,390 parts In-Stock

1+ parts

$0.949

100+ parts

$0.572

1k+ parts

$0.430

10k+ parts

-

1,390

$0.949

$0.572

$0.430

-

Mouser Electronics

USA . 417 parts In-Stock

1+ parts

$1.070

100+ parts

$0.633

1k+ parts

$0.457

10k+ parts

-

417

$1.070

$0.633

$0.457

-

Arrow

USA . 30 parts In-Stock

1+ parts

$1.489

100+ parts

-

1k+ parts

-

10k+ parts

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30

$1.489

-

-

-

Flip Electronics (Authorized)

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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250

-

-

-

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Verical

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$1.489

1k+ parts

-

10k+ parts

-

30

-

$1.489

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,097 parts In-Stock

1+ parts

$0.428

100+ parts

-

1k+ parts

-

10k+ parts

-

2,097

$0.428

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

-

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10

$0.444

-

-

-

Vyrian

USA . 7,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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7,860

-

-

-

-

Chip Stock

USA . 5,150 parts In-Stock

1+ parts

-

100+ parts

-

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5,150

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-

-

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Flip Electronics

USA . 319 parts In-Stock

1+ parts

-

100+ parts

-

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319

-

-

-

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Bristol Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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100

-

-

-

-

Dan-Mar Components

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

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-

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100

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 3 parts In-Stock

1+ parts

-

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-

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3

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,178 parts In-Stock

1+ parts

$0.326

100+ parts

-

1k+ parts

-

10k+ parts

-

1,178

$0.326

-

-

-

Corphita

USA . 251 parts In-Stock

1+ parts

$0.405

100+ parts

-

1k+ parts

-

10k+ parts

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251

$0.405

-

-

-

Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

-

309

$0.426

-

-

-

Argo Parts USA

USA . 473 parts In-Stock

1+ parts

$0.444

100+ parts

-

1k+ parts

-

10k+ parts

$0.431

473

$0.444

-

-

$0.431

Continental Prestige Electronics

USA . 227 parts In-Stock

1+ parts

$0.783

100+ parts

$0.569

1k+ parts

$0.342

10k+ parts

$0.321

227

$0.783

$0.569

$0.342

$0.321

Microchip USA

USA . 1,872 parts In-Stock

1+ parts

$6.370

100+ parts

$6.330

1k+ parts

$6.310

10k+ parts

$6.290

1,872

$6.370

$6.330

$6.310

$6.290

SupplyDigital Components

Austria . 8,389 parts In-Stock

1+ parts

-

100+ parts

-

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8,389

-

-

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Kulean Microsystems

USA . 7,801 parts In-Stock

1+ parts

-

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7,801

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-

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Perfect Parts

USA . 3,660 parts In-Stock

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3,660

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-

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TANS Electronics

Latvia . 2,849 parts In-Stock

1+ parts

-

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2,849

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.435

1k+ parts

$0.422

10k+ parts

$0.413

2,000

-

$0.435

$0.422

$0.413

UHIMA Technologies

Türkiye . 650 parts In-Stock

1+ parts

-

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650

-

-

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Problanco Electronics

Mexico . 121 parts In-Stock

1+ parts

-

100+ parts

-

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121

-

-

-

-

Overview

Enhance your electronic projects with the high-quality TIP41AG Power BJT by Onsemi. Designed for switching applications, this NPN transistor offers a maximum collector current of 6A and a maximum power dissipation of 65W, making it a reliable choice for various power circuits. With Onsemi's reputation for cutting-edge technology and innovation, you can trust that this transistor delivers exceptional performance and durability. Upgrade your designs today with the TIP41AG and experience the efficiency and precision it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and insulation, ensuring the transistor is protected from external elements and can operate reliably.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile for various electronic circuits.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate this transistor into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in controlling current flow.

Maximum Power Dissipation (Abs): 65 W

With a high power dissipation rating, this transistor can handle high loads with minimal risk of overheating.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to function reliably even in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating provides flexibility in circuit design and ensures safe operation within specified voltage limits.

Maximum Collector Current (IC): 6 A

With a high collector current rating, this transistor can handle significant current flows without performance degradation.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP41AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP41AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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