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MPSW55RLRAG

Onsemi

MPSW55RLRAG by Onsemi

MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

26,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 26,000 parts In-Stock

1+ parts

-

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$0.120

26,000

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$0.120

Verical

USA . 26,000 parts In-Stock

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$0.086

26,000

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$0.086

Distributors (In-Stock)

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Digiode

USA . 1,956 parts In-Stock

1+ parts

$0.072

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1,956

$0.072

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DigiKey Marketplace

USA . 26,000 parts In-Stock

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26,000

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 5,279 parts In-Stock

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5,279

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Distributors (Availability)

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Corphita

USA . 2,221 parts In-Stock

1+ parts

$0.068

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-

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2,221

$0.068

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Corohmni

South Africa . 334 parts In-Stock

1+ parts

$0.076

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334

$0.076

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AZTECH Wire

Italy . 378 parts In-Stock

1+ parts

$16.290

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378

$16.290

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QUARKTWIN TECHNOLOGY LTD

USA . 29,674 parts In-Stock

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29,674

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Continental Prestige Electronics

USA . 26,000 parts In-Stock

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$0.069

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26,000

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$0.069

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Kulean Microsystems

USA . 7,715 parts In-Stock

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7,715

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Problanco Electronics

Mexico . 7,388 parts In-Stock

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TANS Electronics

Latvia . 1,611 parts In-Stock

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UHIMA Technologies

Türkiye . 960 parts In-Stock

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960

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SupplyDigital Components

Austria . 677 parts In-Stock

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677

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Overview

Discover the exceptional performance and reliability of the MPSW55RLRAG Power Bipolar Junction Transistor by Onsemi. With a maximum VCEsat of only 0.5V and a minimum DC current gain of 50, this PNP transistor is ideal for amplifier applications. Its package body material, PLASTIC/EPOXY, ensures durability while its cylindrical shape makes it easy to install. Perfect for various electronic projects, this transistor offers superior quality and value, providing customers with the advantage of high efficiency and consistent performance. Trust Onsemi to deliver cutting-edge technology for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Suitable for amplification applications where PNP transistors are required.

Configuration: SINGLE

Simplifies circuit design by having a single transistor in the package.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in audio or radio frequency circuits.

Maximum VCEsat: 0.5 V

Low saturation voltage helps reduce power dissipation and improve efficiency of the transistor.

Package Shape: ROUND

Provides a compact and space-saving design for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Enables easy and secure soldering onto PCBs for stable connections.

No. of Terminals: 3

Simplified pin configuration for easy integration into circuits.

Maximum Power Dissipation (Abs): 2.5 W

Can handle high power dissipation levels, ensuring reliability and longevity.

Package Style (Meter): CYLINDRICAL

Offers a robust and compact package style for easy handling and mounting.

Maximum Power Dissipation Ambient: 1 W

Can dissipate heat efficiently and operate under varying ambient temperature conditions.

Minimum DC Current Gain (hFE): 50

Ensures consistent and reliable amplification performance in circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance or reliability.

Maximum Collector-Base Capacitance: 15 pF

Low capacitance reduces signal distortion and improves high-frequency response.

Maximum Collector-Emitter Voltage: 60 V

Can handle high voltage levels in the circuit without breakdown or damage.

Transistor Element Material: SILICON

Provides high performance and reliability compared to other materials.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold temperatures without performance degradation.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels without overheating or damage.

Terminal Finish: TIN SILVER COPPER

Provides good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on PCBs or heat sinks.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during soldering processes without damage.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications requiring fast switching times and high bandwidth.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW55RLRAG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW55RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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