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MPSW42RLRAG

Onsemi

MPSW42RLRAG by Onsemi

MPSW42RLRAG by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications in temperatures ranging from -55 to 150 °C, it features a collector-emitter voltage of 300V. Its through-hole package makes it suitable for various cylindrical power designs.

Median Price

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Lifecycle Status

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1k+

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 1,197 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 6,462 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,991 parts In-Stock

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Amble Industries

USA . 4,333 parts In-Stock

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TANS Electronics

Latvia . 4,240 parts In-Stock

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SupplyDigital Components

Austria . 3,952 parts In-Stock

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Kulean Microsystems

USA . 2,158 parts In-Stock

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Corphita

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Corohmni

South Africa . 462 parts In-Stock

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Overview

Upgrade your power management with the MPSW42RLRAG by Onsemi! Manufactured by a trusted name in the industry, this NPN Power Bipolar Junction Transistor offers exceptional quality and reliability. Ideal for a variety of applications, this single configuration transistor delivers a low VCEsat of 0.5V, ensuring efficient operation. With a high DC current gain of 40, maximum collector-emitter voltage of 300V, and a sleek cylindrical package design, this transistor is a must-have for your power circuit needs. Say goodbye to inefficiency and hello to superior performance with the MPSW42RLRAG!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various applications.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power losses and improving efficiency.

Package Shape: ROUND

Compact shape allows for easy mounting and integration into different types of circuits.

Maximum Power Dissipation (Abs): 2.5 W

Can handle high power levels, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 40

Higher gain allows for better amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW42RLRAG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW42RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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