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MPSW42

Onsemi

MPSW42 by Onsemi

MPSW42 by Onsemi is a NPN BJT with max VCEsat of 0.5V, hFE of 40, and max IC of 0.5A. Ideal for power applications, it has a max collector-emitter voltage of 300V and operates b/w -55 to 150 °C. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,294 parts In-Stock

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$0.200

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2,294

$0.200

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Component Electronics Inc.

Canada . 81 parts In-Stock

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$1.540

100+ parts

$1.150

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$1.000

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81

$1.540

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$1.000

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Ace Electronics

USA . 472 parts In-Stock

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$2.000

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472

$2.000

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Chip Stock

USA . 57,000 parts In-Stock

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57,000

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Digiode

USA . 2,613 parts In-Stock

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Anansix

USA . 1,514 parts In-Stock

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1,514

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J & M Industries LLC

USA . 800 parts In-Stock

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800

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Corel Iberica Componentes, S.L.

Spain . 430 parts In-Stock

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430

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LIBRA Elektronik GmbH

Germany . 388 parts In-Stock

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388

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Odintec Ltd.

Israel . 10 parts In-Stock

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10

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Prism Electronics

USA . 7 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 339 parts In-Stock

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$1.540

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339

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QUARKTWIN TECHNOLOGY LTD

USA . 16,828 parts In-Stock

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SupplyDigital Components

Austria . 3,542 parts In-Stock

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Problanco Electronics

Mexico . 2,792 parts In-Stock

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TANS Electronics

Latvia . 1,747 parts In-Stock

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Corphita

USA . 1,132 parts In-Stock

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Assy Fe

Spain . 430 parts In-Stock

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Metaverse IC Inc.

Canada . 300 parts In-Stock

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300

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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242

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Kulean Microsystems

USA . 65 parts In-Stock

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65

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Perfect Parts

USA . 8 parts In-Stock

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Overview

Unleash the power of innovation with the MPSW42 by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) designed to elevate your electronic projects to new heights. Manufactured by the renowned Onsemi, this NPN transistor offers unmatched reliability and performance. Whether you're working on amplifiers, power supplies, or motor control applications, the MPSW42 delivers exceptional value with its low VCEsat, high DC current gain, and impressive power dissipation capabilities. Say goodbye to limitations and hello to endless possibilities with the MPSW42 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used configuration with versatile applications in electronic circuits.

Maximum VCEsat: 0.5 V

Low VCEsat helps in reducing power dissipation and increasing efficiency.

Package Shape: ROUND

Compact and easy to mount design for space-saving installations.

Maximum Power Dissipation (Abs): 2.5 W

Can handle moderate power levels without overheating, ensuring reliability.

Maximum Power Dissipation Ambient: 1 W

Suitable for applications where ambient temperature may affect power dissipation.

Minimum DC Current Gain (hFE): 40

Higher DC current gain allows for better amplification of signals in circuits.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics and reliability.

Maximum Collector Current (IC): 0.5 A

Can handle moderate collector current levels in various circuit configurations.

Nominal Transition Frequency (fT): 50 MHz

Provides high-frequency operation, suitable for radio frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW42 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW42 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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