Loading...

MPSW56RLRP

Onsemi

MPSW56RLRP by Onsemi

MPSW56RLRP by Onsemi is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 80V. With a max power dissipation of 2.5W, it operates in temperatures ranging from -55 to 150°C.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 286,750 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

286,750

-

$0.092

$0.077

$0.068

DigiKey

USA . 286,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.120

286,750

-

-

-

$0.120

Verical

USA . 286,750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

286,750

-

-

-

$0.086

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,240 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

-

2,240

$0.072

-

-

-

Vyrian

USA . 931 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

931

$0.076

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 473 parts In-Stock

1+ parts

$0.068

100+ parts

-

1k+ parts

-

10k+ parts

-

473

$0.068

-

-

-

Corohmni

South Africa . 347 parts In-Stock

1+ parts

$0.076

100+ parts

-

1k+ parts

-

10k+ parts

-

347

$0.076

-

-

-

Continental Prestige Electronics

USA . 287,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.069

10k+ parts

-

287,250

-

-

$0.069

-

QUARKTWIN TECHNOLOGY LTD

USA . 13,773 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,773

-

-

-

-

Kulean Microsystems

USA . 4,983 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,983

-

-

-

-

TANS Electronics

Latvia . 4,765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,765

-

-

-

-

Problanco Electronics

Mexico . 3,522 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,522

-

-

-

-

UHIMA Technologies

Türkiye . 980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

980

-

-

-

-

SupplyDigital Components

Austria . 194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

194

-

-

-

-

Overview

Elevate your amplifier projects with the MPSW56RLRP by Onsemi. Crafted with precision and expertise, this PNP Power Bipolar Junction Transistor offers unparalleled performance and reliability. From its sleek plastic/epoxy package design to its high DC current gain of 50, this transistor is ideal for amplification applications. With a low VCEsat of 0.5V and a maximum power dissipation of 2.5W, the MPSW56RLRP ensures optimal functionality and efficiency. Trust Onsemi to deliver quality components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

PNP configuration is suitable for applications like amplifiers, making this transistor ideal for such purposes.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power dissipation and improves efficiency in the amplifier circuit.

Package Shape: ROUND

Round package shape facilitates easy installation and mounting in various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy electrical connections, enhancing reliability in amplifier circuits.

No. of Terminals: 3

Simple 3-terminal design simplifies circuit connections and reduces complexity in amplifier design.

Maximum Power Dissipation (Abs): 2.5 W

High power dissipation capability allows the transistor to handle significant power levels without damage.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient heat dissipation, contributing to the transistor's overall reliability.

Maximum Power Dissipation Ambient: 1 W

Can dissipate power efficiently in ambient conditions for stable operation.

Minimum DC Current Gain (hFE): 50

High DC current gain ensures effective current amplification and signal fidelity in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for operation in various environmental conditions.

Maximum Collector-Base Capacitance: 15 pF

Low collector-base capacitance minimizes the risk of feedback and instability in amplifier circuits.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides a safety margin for voltage spikes and transients in the circuit.

Transistor Element Material: SILICON

Silicon construction offers high reliability and performance in amplifier applications.

Minimum Operating Temperature: -55 °C

Can operate reliably even in cold environments, ensuring consistent performance in various conditions.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate collector currents, suitable for typical amplifier applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability for secure connections in amplifier circuits.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and connection in amplifier layouts.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable solder joints during manufacturing processes.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency enables efficient signal amplification and processing in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW56RLRP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW56RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7