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MPSW42RLRA

Onsemi

MPSW42RLRA by Onsemi

MPSW42RLRA by Onsemi is a NPN Power BJT with VCEsat of 0.5V, hFE of 40, and IC of 0.5A. Ideal for power applications, it has a max VCE of 300V and Pdiss of 2.5W. With a temp range from -55 to 150 °C, it suits various electronic designs requiring high power dissipation in a compact package.

Median Price

$200.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 8,000 parts In-Stock

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$200.000

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$0.100

8,000

$200.000

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$0.100

Chip Stock

USA . 34,000 parts In-Stock

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34,000

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Odintec Ltd.

Israel . 12,970 parts In-Stock

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12,970

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ComSIT Distribution GmbH

Germany . 7,970 parts In-Stock

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ComSIT USA

USA . 6,000 parts In-Stock

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Q Components

USA . 3,800 parts In-Stock

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3,800

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Greenchips

USA . 2,000 parts In-Stock

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2,000

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SIE Connect GmbH - GreenChips

Germany . 2,000 parts In-Stock

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2,000

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Manoshevitz Elec. Sales

Israel . 500 parts In-Stock

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500

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Vyrian

USA . 393 parts In-Stock

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393

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Digiode

USA . 372 parts In-Stock

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372

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 432 parts In-Stock

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$200.000

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432

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QUARKTWIN TECHNOLOGY LTD

USA . 14,231 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kulean Microsystems

USA . 4,739 parts In-Stock

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Problanco Electronics

Mexico . 4,434 parts In-Stock

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4,434

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Amble Industries

USA . 2,000 parts In-Stock

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Corphita

USA . 1,828 parts In-Stock

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SupplyDigital Components

Austria . 1,756 parts In-Stock

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1,756

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Assy Fe

Spain . 1,140 parts In-Stock

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TANS Electronics

Latvia . 718 parts In-Stock

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718

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UHIMA Technologies

Türkiye . 8 parts In-Stock

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Overview

Unleash the power of innovation with the MPSW42RLRA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). This NPN transistor in a single configuration offers exceptional value and performance for a wide range of applications. With a maximum VCEsat of 0.5V and a minimum DC current gain of 40, this transistor provides high efficiency and durability. Whether you're looking to enhance your electronics projects or boost your industrial applications, the MPSW42RLRA is the perfect choice for maximizing performance and productivity. Choose Onsemi for excellence in every circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching.

Configuration: SINGLE

Simplified design with only one transistor in a single package.

Maximum VCEsat: 0.5 V

Low saturation voltage helps in reducing power dissipation and increasing efficiency.

Terminal Form: THROUGH-HOLE

Ease of soldering and mounting on PCBs for reliable connections.

Maximum Power Dissipation (Abs): 2.5 W

Can handle high power levels without getting damaged.

Minimum DC Current Gain (hFE): 40

Ensures stable and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 300 V

Suitable for applications requiring higher voltage handling capabilities.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels for various applications.

Nominal Transition Frequency (fT): 50 MHz

Ability to switch at high frequencies making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW42RLRA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW42RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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