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MPSW42G

Onsemi

MPSW42G by Onsemi

MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.

Median Price

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4

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1k+

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Chip Stock

USA . 16,910 parts In-Stock

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Vyrian

USA . 7,809 parts In-Stock

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Digiode

USA . 1,325 parts In-Stock

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ComSIT Distribution GmbH

Germany . 750 parts In-Stock

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AZTECH Wire

Italy . 250 parts In-Stock

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$20.600

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250

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Component Stockers USA

USA . 778 parts In-Stock

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$99.990

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Perfect Parts

USA . 9,692 parts In-Stock

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Problanco Electronics

Mexico . 8,255 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,972 parts In-Stock

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TANS Electronics

Latvia . 4,532 parts In-Stock

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SupplyDigital Components

Austria . 2,813 parts In-Stock

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Kulean Microsystems

USA . 2,028 parts In-Stock

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Corphita

USA . 558 parts In-Stock

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Corohmni

South Africa . 478 parts In-Stock

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UHIMA Technologies

Türkiye . 439 parts In-Stock

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Overview

Enhance your power electronics projects with the high-quality MPSW42G NPN Power Bipolar Junction Transistor from Onsemi. With a maximum VCEsat of 0.5V and a minimum DC current gain of 40, this transistor offers exceptional performance and reliability. Whether you're designing voltage regulators, amplifiers, or motor control circuits, the MPSW42G is the perfect choice for applications that demand precision and efficiency. Trust Onsemi's reputation for excellence and elevate your designs with the MPSW42G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile, making this product compatible with a wide range of applications.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves efficiency in switching applications.

Maximum Power Dissipation (Abs): 2.5 W

The high power dissipation capability allows the transistor to handle a range of power levels without overheating.

Maximum Collector-Emitter Voltage: 300 V

With a high Vce, this transistor can be used in applications that require higher voltage handling.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures consistent amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this transistor suitable for use in environments with elevated temperatures.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency enables this transistor to switch quickly between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW42G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW42G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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