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MPSW55G

Onsemi

MPSW55G by Onsemi

The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.

Median Price

$0.236

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

20,000

-

$0.211

$0.175

$0.156

DigiKey

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.260

20,000

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-

-

$0.260

Distributors (In-Stock)

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Digiode

USA . 992 parts In-Stock

1+ parts

$0.164

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-

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992

$0.164

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Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 10,506 parts In-Stock

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10,506

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Distributors (Availability)

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Corphita

USA . 242 parts In-Stock

1+ parts

$0.156

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-

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242

$0.156

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Corohmni

South Africa . 256 parts In-Stock

1+ parts

$0.173

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256

$0.173

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Component Stockers USA

USA . 19,912 parts In-Stock

1+ parts

$0.180

100+ parts

$0.170

1k+ parts

$0.150

10k+ parts

$0.150

19,912

$0.180

$0.170

$0.150

$0.150

AZTECH Wire

Italy . 112 parts In-Stock

1+ parts

$14.610

100+ parts

-

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112

$14.610

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Continental Prestige Electronics

USA . 20,000 parts In-Stock

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$0.157

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$0.157

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Kepictronics

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,570 parts In-Stock

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Kulean Microsystems

USA . 7,803 parts In-Stock

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7,803

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SupplyDigital Components

Austria . 6,411 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,733 parts In-Stock

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5,733

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TANS Electronics

Latvia . 5,183 parts In-Stock

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Problanco Electronics

Mexico . 1,973 parts In-Stock

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1,973

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UHIMA Technologies

Türkiye . 728 parts In-Stock

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728

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Overview

Discover the power of the MPSW55G by Onsemi, a top-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is ideal for various amplifier applications. With a low VCEsat and high DC current gain, this transistor delivers excellent efficiency while ensuring optimal power dissipation. Whether you're looking to amplify signals or drive loads, the MPSW55G provides the perfect solution with its superior design and functionality. Elevate your projects with this versatile and dependable transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility for different circuit designs.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power losses and improves efficiency in amplifier circuits.

Terminal Form: THROUGH-HOLE

Enables easy mounting and soldering of the transistor onto circuit boards, providing secure connections.

Maximum Power Dissipation (Abs): 2.5 W

Can handle high power dissipation levels, allowing for robust performance in demanding amplifier applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

Supports higher voltage applications, making it versatile for different amplifier designs.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, ensuring reliable performance in a wide range of conditions.

Nominal Transition Frequency (fT): 50 MHz

Offers high frequency capability, suitable for amplifier applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MPSW55G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MPSW55G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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