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NJD2873RL

Onsemi

NJD2873RL by Onsemi

NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,882 parts In-Stock

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Digiode

USA . 2,265 parts In-Stock

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2,265

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AZTECH Wire

Italy . 796 parts In-Stock

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$9.640

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796

$9.640

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Component Stockers USA

USA . 609 parts In-Stock

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$99.990

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609

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Problanco Electronics

Mexico . 5,396 parts In-Stock

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UHIMA Technologies

Türkiye . 971 parts In-Stock

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971

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TANS Electronics

Latvia . 712 parts In-Stock

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Corphita

USA . 161 parts In-Stock

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Kulean Microsystems

USA . 112 parts In-Stock

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Corohmni

South Africa . 83 parts In-Stock

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SupplyDigital Components

Austria . 64 parts In-Stock

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Overview

Unlock the power of innovation with the NJD2873RL by Onsemi, a high-quality Power BJT transistor designed for amplification applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor offers exceptional performance and reliability. With a maximum power dissipation of 15W and a maximum collector-emitter voltage of 50V, this transistor is ideal for a wide range of electronic projects. Say goodbye to limitations and hello to endless possibilities with the NJD2873RL.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easier to design and integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Surface mount technology allows for compact and efficient PCB design.

Package Shape: RECTANGULAR

Rectangular shape offers ease of handling and soldering during assembly.

Terminal Form: GULL WING

Gull wing terminals ensure reliable electrical connections and ease of installation.

No. of Terminals: 2

Only 2 terminals simplify circuit connections and reduce complexity.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for handling of larger loads.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB and allows for denser circuit designs.

Minimum DC Current Gain (hFE): 40

A higher minimum DC current gain ensures consistent and reliable amplification.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring up to 50V collector-emitter voltage.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability in various applications.

Maximum Collector Current (IC): 2 A

Capable of handling high collector currents up to 2A.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and electrical contact.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection and layout.

Case Connection: COLLECTOR

Case connection at the collector allows for easier grounding and thermal management.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable solder joints during assembly.

Nominal Transition Frequency (fT): 65 MHz

High nominal transition frequency allows for high-speed switching and amplification capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD2873RL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD2873RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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