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NJD2873G

Onsemi

NJD2873G by Onsemi

NJD2873G by Onsemi is a NPN BJT transistor with 15W power dissipation, 50V max collector-emitter voltage, and 65MHz fT. Ideal for amplifier applications, it has a single configuration in a small outline package with Gull Wing terminals.

Median Price

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2

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1k+

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Digiode

USA . 2,042 parts In-Stock

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Vyrian

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Problanco Electronics

Mexico . 6,045 parts In-Stock

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TANS Electronics

Latvia . 2,908 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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Corphita

USA . 710 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 13 parts In-Stock

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Overview

Experience the superior quality and reliability of the NJD2873G power bipolar junction transistor by Onsemi. With a reputation for excellence in the industry, Onsemi delivers products that exceed expectations. Ideal for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 50V and a maximum operating temperature of 175 °C, ensuring high performance even in demanding conditions. Trust Onsemi to provide you with the innovative solutions you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Can be easily mounted onto circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and routing on circuit boards.

No. of Terminals: 2

Simple two-terminal design for easy connection in circuits.

Maximum Power Dissipation (Abs): 15 W

High power dissipation capability allows for handling of larger loads and higher power applications.

Package Style (Meters): SMALL OUTLINE

Compact size for space-constrained applications and compatibility with small outline packages.

Minimum DC Current Gain (hFE): 40

Sufficient gain for amplification purposes in various circuit designs.

Maximum Operating Temperature: 175 °C

Wide operating temperature range for reliability in different environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Suitable for circuits requiring higher voltage capability while maintaining stability.

Transistor Element Material: SILICON

Silicon material ensures high-performance characteristics and reliability in operation.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for operation in extreme low-temperature conditions.

Maximum Collector Current (IC): 2 A

High collector current rating for handling larger currents in amplification circuits.

Terminal Finish: MATTE TIN

Matte tin finish for improved solderability and reliability in circuit connections.

Terminal Position: SINGLE

Single terminal position for easy insertion and soldering in circuit boards.

Case Connection: COLLECTOR

Collector connection for efficient routing of collector current in the circuit.

Nominal Transition Frequency (fT): 65 MHz

High transition frequency for fast switching and high-frequency signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD2873G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD2873G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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