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NJD2873

Onsemi

NJD2873 by Onsemi

NJD2873 by Onsemi is a NPN BJT transistor with 2A IC, 50V VCE, and 15W Pd. Ideal for amplifier applications, it has a hFE of 40 and operates up to 175 °C. This Gull Wing package features a small outline design suitable for surface mount assembly.

Median Price

$0.343

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,577 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

4,577

-

$0.343

$0.285

$0.254

DigiKey

USA . 4,577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.290

4,577

-

-

-

$0.290

Verical

USA . 4,577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.386

10k+ parts

$0.356

4,577

-

-

$0.386

$0.356

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,419 parts In-Stock

1+ parts

$0.225

100+ parts

-

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-

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-

2,419

$0.225

-

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Digiode

USA . 2,151 parts In-Stock

1+ parts

$0.268

100+ parts

-

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10k+ parts

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2,151

$0.268

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 264 parts In-Stock

1+ parts

$0.225

100+ parts

-

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264

$0.225

-

-

-

Corphita

USA . 2,329 parts In-Stock

1+ parts

$0.254

100+ parts

-

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2,329

$0.254

-

-

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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SupplyDigital Components

Austria . 8,075 parts In-Stock

1+ parts

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8,075

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Problanco Electronics

Mexico . 6,402 parts In-Stock

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6,402

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Continental Prestige Electronics

USA . 4,577 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.225

10k+ parts

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4,577

-

-

$0.225

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Kulean Microsystems

USA . 1,634 parts In-Stock

1+ parts

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100+ parts

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1,634

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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789

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TANS Electronics

Latvia . 62 parts In-Stock

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62

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Overview

Experience the superior performance of the NJD2873 by Onsemi, a top-quality Power Bipolar Junction Transistor designed to amplify with precision. Onsemi's reputation for reliability and innovation shines through in this NPN transistor, ideal for amplifier applications. With a maximum power dissipation of 15W and a minimum DC current gain of 40, this transistor offers exceptional value and efficiency. Upgrade your projects with the NJD2873 and enjoy the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability enables easy installation on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs and facilitates easy integration into circuit designs.

Terminal Form: GULL WING

Gull wing terminals provide reliable connectivity and secure soldering, ensuring stable operation of the transistor.

No. of Terminals: 2

Having only 2 terminals simplifies the connections required for the transistor, making it easier to integrate into circuits.

Maximum Power Dissipation (Abs): 15 W

With a high maximum power dissipation, this transistor can handle significant power levels, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for denser circuit designs, ideal for compact devices.

Minimum DC Current Gain (hFE): 40

Higher DC current gain ensures efficient amplification, making this transistor suitable for high-performance amplifier circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various environmental conditions, ensuring long-term stability.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics and reliability, making this transistor a durable and long-lasting choice.

Maximum Collector Current (IC): 2 A

High maximum collector current allows for handling of larger currents, making this transistor suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable electrical connections, enhancing the durability of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper orientation during installation, making the transistor easy to use.

Case Connection: COLLECTOR

Collector case connection helps in efficient heat dissipation and ensures reliable performance even under high power conditions.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering processes, ensuring stable connections during manufacturing and assembly.

Nominal Transition Frequency (fT): 65 MHz

High nominal transition frequency indicates good switching characteristics, making this transistor suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD2873 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD2873 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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