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NJD2873RLG

Onsemi

NJD2873RLG by Onsemi

NJD2873RLG by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has a hFE of 40 and operates up to 175 °C. Its Gull Wing terminals make it suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,077 parts In-Stock

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Vyrian

USA . 407 parts In-Stock

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407

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Problanco Electronics

Mexico . 6,991 parts In-Stock

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SupplyDigital Components

Austria . 2,079 parts In-Stock

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Corphita

USA . 1,602 parts In-Stock

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Kulean Microsystems

USA . 1,277 parts In-Stock

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TANS Electronics

Latvia . 339 parts In-Stock

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UHIMA Technologies

Türkiye . 294 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Overview

Elevate your power amplification projects with the Onsemi NJD2873RLG Power BJT. Crafted by a trusted manufacturer, this NPN transistor offers reliability and superior performance. Ideal for amplifier applications, this transistor boasts a maximum collector-emitter voltage of 50V and a maximum operating temperature of 175 °C, ensuring efficient operation even in demanding conditions. With a compact package style and high transition frequency, the NJD2873RLG delivers exceptional value and benefits to customers seeking quality components for their electronic designs. Upgrade your circuits with this innovative solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration in many amplifier circuits and applications.

Configuration: SINGLE

Simplifies circuit design and makes installation straightforward.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Surface Mount: YES

Enables easy mounting on circuit boards, saving space and facilitating assembly.

Maximum Power Dissipation: 15 W

Handles high power levels efficiently without overheating, ensuring reliability.

Maximum Operating Temperature: 175 °C

Can operate effectively at high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Allows for a wide range of voltage applications, increasing versatility.

Maximum Collector Current: 2 A

Capable of handling moderate current levels, suitable for a variety of circuit designs.

Nominal Transition Frequency: 65 MHz

Provides high-speed operation for rapid signal processing and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD2873RLG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD2873RLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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