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NJD2873T4

Onsemi

NJD2873T4 by Onsemi

NJD2873T4 by Onsemi is a NPN BJT transistor with 2 terminals, capable of handling up to 12.5W power dissipation and 50V collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 40 and operates at temperatures up to 150 °C.

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Chip Stock

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Bristol Electronics

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Atlantic Semiconductor

USA . 3,731 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,205 parts In-Stock

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Vyrian

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Digiode

USA . 632 parts In-Stock

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PC Components Company LLC

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TANS Electronics

Latvia . 7,069 parts In-Stock

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Kulean Microsystems

USA . 6,728 parts In-Stock

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SupplyDigital Components

Austria . 3,879 parts In-Stock

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Corphita

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Singapore . 655 parts In-Stock

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South Africa . 279 parts In-Stock

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Overview

Enhance your amplifier performance with the NJD2873T4 by Onsemi. Crafted with precision and expertise, this power bipolar junction transistor offers unrivaled quality and reliability. Ideal for a wide range of applications, this NPN transistor delivers exceptional amplification capabilities. With its compact package style and high maximum operating temperature, the NJD2873T4 is designed to meet the needs of modern electronics. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations. Elevate your projects with the NJD2873T4 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides a lightweight and durable package for the transistor, making it ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easy to integrate into electronic systems.

Surface Mount: YES

Being surface mountable allows for easy and space-efficient mounting on PCBs, saving valuable board space.

Maximum Power Dissipation (Abs): 12.5 W

The high power dissipation capability of 12.5 W ensures the transistor can handle high power applications without overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand higher temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50 V allows for the transistor to be used in a wide range of voltage applications.

Maximum Collector Current (IC): 2 A

The high collector current rating of 2 A enables the transistor to handle larger currents, expanding its applicability in various circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJD2873T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJD2873T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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