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2SB817C-1E

Onsemi

2SB817C-1E by Onsemi

The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.

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1k+

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Vyrian

USA . 8,655 parts In-Stock

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Digiode

USA . 1,690 parts In-Stock

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AZTECH Wire

Italy . 544 parts In-Stock

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$14.150

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Component Stockers USA

USA . 727 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 8,844 parts In-Stock

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SupplyDigital Components

Austria . 6,386 parts In-Stock

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Problanco Electronics

Mexico . 4,797 parts In-Stock

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TANS Electronics

Latvia . 4,748 parts In-Stock

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Kulean Microsystems

USA . 687 parts In-Stock

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Corphita

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Native Components

USA . 479 parts In-Stock

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Northwest PG Solutions

USA . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 268 parts In-Stock

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Corohmni

South Africa . 140 parts In-Stock

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Perfect Parts

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Robosynatics

Brazil . 100 parts In-Stock

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$1.380

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$1.278

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$1.278

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Lucentia Tech

USA . 100 parts In-Stock

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$1.380

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$1.278

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$1.278

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$1.380

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$1.278

Overview

Looking for a reliable and high-quality power bipolar junction transistor? Look no further than the 2SB817C-1E by Onsemi. With its PNP configuration and maximum collector-emitter voltage of 140V, this transistor is perfect for switching applications. Onsemi's reputation for excellence ensures that you're getting a top-notch product. Whether you're building industrial equipment or automotive electronics, the 2SB817C-1E offers unmatched value and performance. Upgrade your designs today with this versatile and efficient transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits.

Configuration: SINGLE

Simplified design and wiring for ease of implementation.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring reliable performance.

Package Shape: RECTANGULAR

Easily fits into standard electronic circuits and layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting on PCBs.

No. of Terminals: 3

Suitable for applications requiring three terminal connections.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and connection in various electronic devices.

Minimum DC Current Gain (hFE): 35

Ensures stable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 140 V

Can handle higher voltages, expanding its range of applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide temperature range.

Maximum Collector Current (IC): 12 A

Capable of handling higher currents for demanding applications.

Terminal Finish: TIN

Enhances solderability and conductivity for secure connections.

Terminal Position: SINGLE

Simplifies the connection process for easy integration.

Nominal Transition Frequency (fT): 10 MHz

Provides high-frequency capabilities for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB817C-1E attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB817C-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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