Loading...

2SB826R

Onsemi

2SB826R by Onsemi

The Onsemi 2SB826R is a PNP Power BJT with max. VCE of 50V and max. IC of 12A. It has a min. hFE of 100, suitable for switching applications due to its single configuration and silicon element material. The transistor's package style is flange mount with through-hole terminals, making it ideal for various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 16 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,860

-

-

-

-

Digiode

USA . 456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

456

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 320 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

$0.374

320

$0.390

-

-

$0.374

Northwest PG Solutions

USA . 268 parts In-Stock

1+ parts

$0.429

100+ parts

-

1k+ parts

-

10k+ parts

$0.378

268

$0.429

-

-

$0.378

SupplyDigital Components

Austria . 5,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,279

-

-

-

-

Problanco Electronics

Mexico . 5,190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,190

-

-

-

-

Kulean Microsystems

USA . 3,835 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,835

-

-

-

-

TANS Electronics

Latvia . 1,951 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,951

-

-

-

-

Corphita

USA . 515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

515

-

-

-

-

Corohmni

South Africa . 356 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

356

-

-

-

-

UHIMA Technologies

Türkiye . 194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

194

-

-

-

-

Overview

Experience the power of innovation with the Onsemi 2SB826R Power Bipolar Junction Transistor. With a reputation for top-quality products, Onsemi delivers unrivaled performance and reliability in every transistor they create. The 2SB826R is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a maximum collector current of 12A. Enjoy seamless operation and efficient performance with this PNP transistor, designed to meet your needs with precision and excellence. Elevate your projects with the superior value and benefits that Onsemi's 2SB826R brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for various switching purposes.

Configuration: SINGLE

Single configuration transistors are easy to work with and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient performance in switching circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and fitting into circuit layouts.

No. of Terminals: 3

With 3 terminals, this transistor offers flexibility in circuit connections and configurations.

Maximum Collector-Emitter Voltage: 50 V

The high maximum voltage rating of 50V enables this transistor to handle higher voltage requirements in circuits.

Maximum Collector Current (IC): 12 A

With a high collector current rating of 12A, this transistor is capable of handling large currents in switching applications.

Nominal Transition Frequency (fT): 10 MHz

The high transition frequency of 10MHz ensures fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB826R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB826R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20