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2SB887

Onsemi

2SB887 by Onsemi

The Onsemi 2SB887 is a PNP power BJT with a Darlington configuration. It has a hFE of 1500, Vce of 100V, and Ic of 10A. Ideal for switching applications due to its high current gain and voltage capabilities in through-hole mounting style.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

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1k+

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Rochester

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Vyrian

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Digiode

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Fibra_Brandt Electronic GMBH

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Native Components

USA . 972 parts In-Stock

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Northwest PG Solutions

USA . 1,920 parts In-Stock

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SupplyDigital Components

Austria . 7,262 parts In-Stock

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Kepictronics

USA . 6,800 parts In-Stock

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TANS Electronics

Latvia . 4,997 parts In-Stock

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Kulean Microsystems

USA . 4,261 parts In-Stock

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Corphita

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Problanco Electronics

Mexico . 1,273 parts In-Stock

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UHIMA Technologies

Türkiye . 596 parts In-Stock

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Corohmni

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Overview

Looking for a reliable and efficient power bipolar junction transistor? Look no further than the 2SB887 by Onsemi. With a reputation for top-quality products, Onsemi delivers once again with this PNP Darlington transistor designed for switching applications. Its high DC current gain and maximum collector-emitter voltage of 100V ensure optimal performance in various circuits. Whether you're in need of a dependable component for your electronic projects or industrial applications, the 2SB887 offers unparalleled value and benefits that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the transistor, ensuring durability and reliability in operation.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power applications, making this transistor suitable for switching applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain, allowing the transistor to switch high loads efficiently.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in controlling current flow.

Maximum Collector-Emitter Voltage: 100 V

This high voltage rating allows the transistor to handle higher voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 10 A

With a high collector current rating, this transistor can handle large current loads without overheating.

Nominal Transition Frequency (fT): 20 MHz

The high transition frequency enables fast switching speeds, making this transistor ideal for high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB887 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.03

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

1500

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB887 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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