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2SB825R

Onsemi

2SB825R by Onsemi

The Onsemi 2SB825R is a PNP Power BJT with max. Vce of 50V and max. Ic of 7A, ideal for switching applications. Featuring hFE >100, fT of 10MHz, it comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

$0.832

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$1.455

100+ parts

$1.324

1k+ parts

$1.193

10k+ parts

-

60

$1.455

$1.324

$1.193

-

Rochester

USA . 5,875 parts In-Stock

1+ parts

-

100+ parts

$0.727

1k+ parts

$0.603

10k+ parts

$0.538

5,875

-

$0.727

$0.603

$0.538

DigiKey

USA . 5,875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.910

10k+ parts

-

5,875

-

-

$0.910

-

Verical

USA . 5,008 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.754

10k+ parts

-

5,008

-

-

$0.754

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,101 parts In-Stock

1+ parts

$0.491

100+ parts

-

1k+ parts

-

10k+ parts

-

2,101

$0.491

-

-

-

Digiode

USA . 2,401 parts In-Stock

1+ parts

$0.566

100+ parts

-

1k+ parts

-

10k+ parts

-

2,401

$0.566

-

-

-

DigiKey Marketplace

USA . 6,125 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,125

-

-

-

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R&J Components

USA . 400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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400

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 228 parts In-Stock

1+ parts

$0.360

100+ parts

-

1k+ parts

-

10k+ parts

$0.346

228

$0.360

-

-

$0.346

Northwest PG Solutions

USA . 1,483 parts In-Stock

1+ parts

$0.396

100+ parts

-

1k+ parts

-

10k+ parts

$0.349

1,483

$0.396

-

-

$0.349

Corphita

USA . 341 parts In-Stock

1+ parts

$0.536

100+ parts

-

1k+ parts

-

10k+ parts

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341

$0.536

-

-

-

Corohmni

South Africa . 38 parts In-Stock

1+ parts

$1.227

100+ parts

-

1k+ parts

-

10k+ parts

-

38

$1.227

-

-

-

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$1.455

100+ parts

$1.324

1k+ parts

$1.193

10k+ parts

-

60

$1.455

$1.324

$1.193

-

Microchip USA

USA . 5,523 parts In-Stock

1+ parts

$3.705

100+ parts

-

1k+ parts

-

10k+ parts

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5,523

$3.705

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 8,514 parts In-Stock

1+ parts

-

100+ parts

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8,514

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SupplyDigital Components

Austria . 7,211 parts In-Stock

1+ parts

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7,211

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Metaverse IC Inc.

Canada . 7,056 parts In-Stock

1+ parts

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100+ parts

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7,056

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-

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Problanco Electronics

Mexico . 6,939 parts In-Stock

1+ parts

-

100+ parts

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6,939

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-

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Continental Prestige Electronics

USA . 6,125 parts In-Stock

1+ parts

-

100+ parts

$0.491

1k+ parts

-

10k+ parts

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6,125

-

$0.491

-

-

Kepictronics

USA . 5,056 parts In-Stock

1+ parts

-

100+ parts

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5,056

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Kulean Microsystems

USA . 4,017 parts In-Stock

1+ parts

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4,017

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TANS Electronics

Latvia . 1,933 parts In-Stock

1+ parts

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100+ parts

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1,933

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UHIMA Technologies

Türkiye . 159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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159

-

-

-

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Overview

Upgrade your power control with the 2SB825R by Onsemi - a top-quality Power BJT transistor designed for high-performance switching applications. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor offers unparalleled reliability and efficiency. Ideal for various power control needs, this single-configuration transistor provides a seamless solution for your switching requirements. Experience the value and benefits of the 2SB825R - unlock new possibilities for your projects with enhanced performance and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplified design and easy implementation in circuits.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement in circuit boards.

Terminal Form: THROUGH-HOLE

Enhanced mechanical stability and reliability during soldering.

No. of Terminals: 3

Simple interface and connection in circuits.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation in applications.

Minimum DC Current Gain (hFE): 100

Ensures consistent amplification and performance in circuits.

Maximum Collector-Emitter Voltage: 50 V

Handles higher voltage levels, expanding application possibilities.

Transistor Element Material: SILICON

Highly reliable and efficient material for transistor construction.

Maximum Collector Current (IC): 7 A

Suitable for handling medium to high current loads in applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides corrosion resistance and ensures long-term reliability.

Terminal Position: SINGLE

Simple and easy connection setup in circuits.

Nominal Transition Frequency (fT): 10 MHz

Suitable for high-frequency applications, ensuring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB825R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB825R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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