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2SB827R

Onsemi

2SB827R by Onsemi

The Onsemi 2SB827R is a PNP BJT transistor with max. Vce of 50V and max. Ic of 7A, ideal for switching applications. It has a min hFE of 100 and fT of 10MHz, making it suitable for high-speed operations in various electronic circuits requiring power amplification or control functions. The transistor comes in a rectangular flange mount package with through-hole terminals, ensuring easy installation and reliable performance.

Median Price

$1.337

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,358 parts In-Stock

1+ parts

-

100+ parts

$1.290

1k+ parts

$1.070

10k+ parts

$0.955

10,358

-

$1.290

$1.070

$0.955

DigiKey

USA . 10,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.610

10k+ parts

-

10,358

-

-

$1.610

-

Verical

USA . 5,646 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.337

10k+ parts

-

5,646

-

-

$1.337

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,357 parts In-Stock

1+ parts

$1.007

100+ parts

-

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-

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1,357

$1.007

-

-

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Vyrian

USA . 369 parts In-Stock

1+ parts

$1.060

100+ parts

-

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369

$1.060

-

-

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Huijzer Components

Netherlands . 56 parts In-Stock

1+ parts

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56

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GES GmbH

Germany . 4 parts In-Stock

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4

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LittleDiode

UK . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,766 parts In-Stock

1+ parts

$0.954

100+ parts

-

1k+ parts

-

10k+ parts

-

1,766

$0.954

-

-

-

Corohmni

South Africa . 283 parts In-Stock

1+ parts

$1.060

100+ parts

-

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283

$1.060

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 14,363 parts In-Stock

1+ parts

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14,363

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Kulean Microsystems

USA . 5,213 parts In-Stock

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5,213

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SupplyDigital Components

Austria . 4,508 parts In-Stock

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4,508

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Microchip USA

USA . 4,150 parts In-Stock

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4,150

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Continental Prestige Electronics

USA . 3,794 parts In-Stock

1+ parts

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100+ parts

$0.872

1k+ parts

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3,794

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$0.872

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Problanco Electronics

Mexico . 1,668 parts In-Stock

1+ parts

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1,668

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TANS Electronics

Latvia . 1,523 parts In-Stock

1+ parts

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1,523

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Native Components

USA . 881 parts In-Stock

1+ parts

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881

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UHIMA Technologies

Türkiye . 632 parts In-Stock

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632

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Northwest PG Solutions

USA . 476 parts In-Stock

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476

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Assy Fe

Spain . 16 parts In-Stock

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16

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Overview

Experience the power of innovation with the Onsemi 2SB827R Power Bipolar Junction Transistor. Manufactured by a trusted leader in the industry, this PNP transistor offers high-quality performance for a variety of applications such as switching. With a maximum collector-emitter voltage of 50V and a maximum collector current of 7A, this transistor provides exceptional value and reliability. Trust Onsemi to deliver top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: PNP

Allows for easy compatibility with PNP circuit configurations.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Enables easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and connection in through-hole PCB mounting.

No. of Terminals: 3

Provides necessary connections for circuit functionality while keeping the design simple.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and connection.

Minimum DC Current Gain (hFE): 100

Ensures consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage requirements in various applications.

Transistor Element Material: SILICON

Offers high performance and reliability due to the superior material characteristics.

Maximum Collector Current (IC): 7 A

Handles high current loads, making it suitable for power applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Provides corrosion resistance and ensures reliable connections.

Terminal Position: SINGLE

Simplifies connection and insertion into circuits.

Nominal Transition Frequency (fT): 10 MHz

Supports high-frequency operations in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB827R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB827R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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