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2SB826

Onsemi

2SB826 by Onsemi

The Onsemi 2SB826 is a PNP Power BJT with max. Vce of 50V and max. Ic of 12A. With hFE of 30, it's ideal for switching applications in electronics due to its silicon element material and fT of 10MHz.

Median Price

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Lifecycle Status

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9

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1k+

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Vyrian

USA . 2,451 parts In-Stock

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Digiode

USA . 2,027 parts In-Stock

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PUI

USA . 526 parts In-Stock

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526

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Fibra_Brandt Electronic GMBH

Germany . 36 parts In-Stock

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R&J Components

USA . 34 parts In-Stock

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LittleDiode

UK . 30 parts In-Stock

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30

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GES GmbH

Germany . 22 parts In-Stock

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Huijzer Components

Netherlands . 10 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 3 parts In-Stock

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Native Components

USA . 373 parts In-Stock

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$1.800

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Northwest PG Solutions

USA . 293 parts In-Stock

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$1.980

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Problanco Electronics

Mexico . 7,550 parts In-Stock

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SupplyDigital Components

Austria . 5,928 parts In-Stock

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Kepictronics

USA . 5,800 parts In-Stock

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TANS Electronics

Latvia . 5,221 parts In-Stock

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Corphita

USA . 1,472 parts In-Stock

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Kulean Microsystems

USA . 1,398 parts In-Stock

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Metaverse IC Inc.

Canada . 350 parts In-Stock

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Corohmni

South Africa . 137 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Assy Fe

Spain . 10 parts In-Stock

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A-Plus Industry Inc.

USA . 10 parts In-Stock

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Overview

Elevate your power management solutions with the Onsemi 2SB826, a high-quality Power Bipolar Junction Transistor designed for efficient switching applications. With a single PNP configuration and a maximum collector-emitter voltage of 50V, this transistor offers reliable performance and durability. Whether you're designing industrial equipment or automotive systems, the 2SB826 delivers exceptional value and versatility. Trust in Onsemi's reputation for excellence and choose the 2SB826 for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the transistor durable and long-lasting.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE

Simplified design as only one transistor needs to be considered.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and strong connection to the circuit board.

No. of Terminals: 3

Simplified connectivity with fewer terminals to consider.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting onto a surface, enhancing stability.

Minimum DC Current Gain (hFE): 30

Ensures consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltages without breakdown, enhancing the versatility of the transistor.

Transistor Element Material: SILICON

Highly efficient material for transistors, offering good performance and reliability.

Maximum Collector Current (IC): 12 A

Capable of handling high current loads, suitable for various applications.

Terminal Position: SINGLE

Simplified connection with a single terminal position to consider.

Nominal Transition Frequency (fT): 10 MHz

Suitable for high-frequency applications, ensuring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB826 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB826 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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