Loading...

2SB881

Onsemi

2SB881 by Onsemi

The Onsemi 2SB881 is a PNP power BJT with Darlington configuration, built-in diode, and resistor. It has hFE of 2000, VCE of 60V, and IC of 7A. Ideal for switching applications due to its high gain and current capabilities in a flange mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,993 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,993

-

-

-

-

Digiode

USA . 149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

149

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 13 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13

-

-

-

-

Huijzer Components

Netherlands . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 208 parts In-Stock

1+ parts

$0.970

100+ parts

-

1k+ parts

-

10k+ parts

-

208

$0.970

-

-

-

Northwest PG Solutions

USA . 382 parts In-Stock

1+ parts

$1.067

100+ parts

-

1k+ parts

-

10k+ parts

-

382

$1.067

-

-

-

Kulean Microsystems

USA . 7,064 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,064

-

-

-

-

Problanco Electronics

Mexico . 4,261 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,261

-

-

-

-

TANS Electronics

Latvia . 4,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,040

-

-

-

-

Corphita

USA . 1,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,965

-

-

-

-

UHIMA Technologies

Türkiye . 347 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

347

-

-

-

-

SupplyDigital Components

Austria . 149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

149

-

-

-

-

Corohmni

South Africa . 123 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

123

-

-

-

-

Overview

Looking for a reliable and high-performance Power Bipolar Junction Transistor (BJT)? Look no further than the 2SB881 from Onsemi! With a manufacturer known for their top-quality products, this PNP transistor offers a Darlington configuration with a built-in diode and resistor, making it ideal for switching applications. The 2SB881 provides customers with exceptional value, benefits, and advantages, including a maximum collector-emitter voltage of 60V and a minimum DC current gain of 2000. Trust Onsemi for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

Allows for high conductivity when in the on-state, making it efficient for switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Offers convenience by integrating additional components in one package, saving space and reducing complexity in circuit design.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance and efficient operation.

Maximum Collector-Emitter Voltage: 60 V

High maximum voltage tolerance provides flexibility in design and allows for use in a variety of voltage applications.

Maximum Collector Current (IC): 7 A

Capable of handling high current loads, making it suitable for applications requiring high power output.

Nominal Transition Frequency (fT): 20 MHz

High transition frequency allows for fast switching speeds, making it ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB881 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.03

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB881 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20