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2SB827S

Onsemi

2SB827S by Onsemi

The Onsemi 2SB827S is a PNP Power BJT with max. Vce of 50V and max. Ic of 7A. It has hFE of 140, ideal for switching applications in various industries due to its high current capacity and frequency response up to 10MHz. The transistor comes in a rectangular package with through-hole terminals suitable for flange mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Rochester

USA . 1,976 parts In-Stock

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Vyrian

USA . 1,822 parts In-Stock

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Digiode

USA . 282 parts In-Stock

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Native Components

USA . 868 parts In-Stock

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$0.108

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Northwest PG Solutions

USA . 1,624 parts In-Stock

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Kulean Microsystems

USA . 7,261 parts In-Stock

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Problanco Electronics

Mexico . 7,056 parts In-Stock

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SupplyDigital Components

Austria . 5,555 parts In-Stock

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TANS Electronics

Latvia . 3,383 parts In-Stock

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Corphita

USA . 2,196 parts In-Stock

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UHIMA Technologies

Türkiye . 224 parts In-Stock

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Corohmni

South Africa . 162 parts In-Stock

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Assy Fe

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Overview

Elevate your power management capabilities with the 2SB827S by Onsemi. This PNP Power Bipolar Junction Transistor offers superior quality and reliability, thanks to Onsemi's renowned reputation for excellence. Ideal for switching applications, this transistor provides unmatched performance and efficiency. With a high DC current gain, maximum collector-emitter voltage of 50V, and maximum collector current of 7A, this product ensures optimal functionality. Trust Onsemi's expertise and choose the 2SB827S for all your power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making the transistor suitable for various environments and applications.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design by having only one transistor in the package, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and reliability in switching circuits.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient use of space on a circuit board.

Terminal Form: THROUGH-HOLE

Easy to solder onto a circuit board, providing a secure connection for stable operation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications where the voltage across the collector-emitter junction does not exceed 50 V, providing safety and reliability.

Maximum Collector Current (IC): 7 A

Capable of handling high collector currents, making it suitable for applications that require higher power levels.

Nominal Transition Frequency (fT): 10 MHz

High transition frequency ensures fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB827S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB827S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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