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2SB883

Onsemi

2SB883 by Onsemi

The Onsemi 2SB883 is a PNP power BJT with a Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 60V, and Ic of 15A. Ideal for switching applications due to its high current gain and collector-emitter voltage capabilities.

Median Price

$1.587

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,373 parts In-Stock

1+ parts

-

100+ parts

$1.530

1k+ parts

$1.270

10k+ parts

$1.130

8,373

-

$1.530

$1.270

$1.130

DigiKey

USA . 8,373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.910

10k+ parts

-

8,373

-

-

$1.910

-

Verical

USA . 8,373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.587

10k+ parts

$1.413

8,373

-

-

$1.587

$1.413

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 430 parts In-Stock

1+ parts

$1.040

100+ parts

-

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430

$1.040

-

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Digiode

USA . 2,108 parts In-Stock

1+ parts

$1.197

100+ parts

-

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2,108

$1.197

-

-

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Huijzer Components

Netherlands . 25 parts In-Stock

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25

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LittleDiode

UK . 10 parts In-Stock

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10

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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9

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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5

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GES GmbH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 296 parts In-Stock

1+ parts

$1.040

100+ parts

-

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296

$1.040

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Corphita

USA . 1,300 parts In-Stock

1+ parts

$1.134

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1,300

$1.134

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Northwest PG Solutions

USA . 321 parts In-Stock

1+ parts

$3.413

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321

$3.413

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Continental Prestige Electronics

USA . 8,398 parts In-Stock

1+ parts

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$1.040

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8,398

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$1.040

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SupplyDigital Components

Austria . 7,487 parts In-Stock

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7,487

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Kulean Microsystems

USA . 5,475 parts In-Stock

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5,475

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TANS Electronics

Latvia . 4,926 parts In-Stock

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4,926

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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Problanco Electronics

Mexico . 4,776 parts In-Stock

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4,776

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Microchip USA

USA . 4,500 parts In-Stock

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4,500

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QUARKTWIN TECHNOLOGY LTD

USA . 3,606 parts In-Stock

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3,606

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Metaverse IC Inc.

Canada . 685 parts In-Stock

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685

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Native Components

USA . 291 parts In-Stock

1+ parts

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$3.010

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291

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$3.010

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UHIMA Technologies

Türkiye . 202 parts In-Stock

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202

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Assy Fe

Spain . 5 parts In-Stock

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5

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Overview

Unleash the power of innovation with the Onsemi 2SB883 Power Bipolar Junction Transistor. This high-quality PNP transistor is designed for switching applications, offering reliable performance and durability. With a maximum collector-emitter voltage of 60V and a maximum collector current of 15A, this Darlington transistor is ideal for a wide range of electronic projects. Trust in Onsemi's reputation for excellence and choose the 2SB883 for all your power transistor needs. Experience the value and benefits that this product brings to your designs - unleash the possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating necessary components in the transistor itself.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Maximum Collector-Emitter Voltage: 60 V

Suitable for higher voltage applications, providing versatility in usage.

Maximum Collector Current (IC): 15 A

Capable of handling high current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB883 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.03

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB883 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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