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2SB824S

Onsemi

2SB824S by Onsemi

The Onsemi 2SB824S is a PNP Power BJT with max. VCE of 50V and IC of 5A. With hFE of 140, it's ideal for switching applications due to its fT of 30MHz. This transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

$0.534

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

2,000

-

$0.515

$0.428

$0.381

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.640

10k+ parts

-

2,000

-

-

$0.640

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.534

10k+ parts

$0.476

2,000

-

-

$0.534

$0.476

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,527 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

-

10k+ parts

-

1,527

$0.349

-

-

-

Digiode

USA . 257 parts In-Stock

1+ parts

$0.401

100+ parts

-

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-

10k+ parts

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257

$0.401

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 350 parts In-Stock

1+ parts

$0.349

100+ parts

-

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-

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-

350

$0.349

-

-

-

Corphita

USA . 1,500 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

-

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1,500

$0.380

-

-

-

Component Stockers USA

USA . 2,468 parts In-Stock

1+ parts

$0.440

100+ parts

$0.410

1k+ parts

$0.370

10k+ parts

-

2,468

$0.440

$0.410

$0.370

-

Native Components

USA . 319 parts In-Stock

1+ parts

$0.477

100+ parts

-

1k+ parts

-

10k+ parts

$0.458

319

$0.477

-

-

$0.458

Northwest PG Solutions

USA . 2,233 parts In-Stock

1+ parts

$0.525

100+ parts

-

1k+ parts

-

10k+ parts

$0.463

2,233

$0.525

-

-

$0.463

QUARKTWIN TECHNOLOGY LTD

USA . 10,412 parts In-Stock

1+ parts

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100+ parts

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10,412

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TANS Electronics

Latvia . 7,262 parts In-Stock

1+ parts

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7,262

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SupplyDigital Components

Austria . 6,645 parts In-Stock

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6,645

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Problanco Electronics

Mexico . 6,040 parts In-Stock

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6,040

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Continental Prestige Electronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.349

1k+ parts

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2,000

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$0.349

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Kulean Microsystems

USA . 709 parts In-Stock

1+ parts

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709

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UHIMA Technologies

Türkiye . 532 parts In-Stock

1+ parts

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532

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Overview

Looking for a reliable power transistor for your switching applications? Look no further than the 2SB824S by Onsemi. With a high DC current gain and maximum collector current, this PNP transistor provides efficient performance with a maximum collector-emitter voltage of 50V. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor offers top-notch quality and reliability. Whether you're looking to control motors or regulate power supplies, the 2SB824S delivers superior performance that you can count on. Trust Onsemi for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration, making it easier to integrate into electronic circuits.

Transistor Application: SWITCHING

Optimized for switching applications, providing efficient control over the flow of current in electronic devices.

Package Shape: RECTANGULAR

Easily mountable in rectangular spaces, maximizing efficiency in PCB layout and design.

Terminal Form: THROUGH-HOLE

Allows for easy manual soldering and connection to a PCB, simplifying assembly processes.

No. of Terminals: 3

Simple and straightforward connections with only three terminals, reducing complexity in circuit layout.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting on a flange, providing stability and heat dissipation in high-power applications.

Minimum DC Current Gain (hFE): 140

Consistent and reliable amplification of current, ensuring a stable and predictable performance in electronic circuits.

Maximum Collector-Emitter Voltage: 50 V

Can handle high collector-emitter voltages, making it suitable for a wide range of voltage requirements in electronic devices.

Transistor Element Material: SILICON

Silicon-based material offers high performance and reliability, ensuring long-term durability of the transistor.

Maximum Collector Current (IC): 5 A

Capable of handling high collector currents, making it suitable for applications that require large current flows.

Terminal Finish: Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Provides corrosion resistance and ensures a reliable connection, extending the lifespan of the transistor.

Terminal Position: SINGLE

Simplified design with a single terminal position, facilitating easy integration into electronic circuits.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for fast switching speeds, essential for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB824S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e2

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB824S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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