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2SB824R

Onsemi

2SB824R by Onsemi

The Onsemi 2SB824R is a PNP Power BJT with max. VCE of 50V and IC of 5A. With hFE of min. 100 and fT of 30MHz, it's ideal for switching applications in various industries due to its single configuration and through-hole terminals.

Median Price

$0.534

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,470 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

3,470

-

$0.515

$0.428

$0.381

DigiKey

USA . 3,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.640

10k+ parts

-

3,470

-

-

$0.640

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.534

10k+ parts

$0.476

2,000

-

-

$0.534

$0.476

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,238 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

-

10k+ parts

-

2,238

$0.349

-

-

-

Digiode

USA . 90 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

90

$0.401

-

-

-

DigiKey Marketplace

USA . 3,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,470

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 398 parts In-Stock

1+ parts

$0.061

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

398

$0.061

-

-

$0.058

Ampacity Inc.

Singapore . 2,969 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

10k+ parts

-

2,969

$0.297

-

-

-

Corohmni

South Africa . 120 parts In-Stock

1+ parts

$0.349

100+ parts

-

1k+ parts

-

10k+ parts

-

120

$0.349

-

-

-

Corphita

USA . 1,667 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

-

10k+ parts

-

1,667

$0.380

-

-

-

Kulean Microsystems

USA . 8,348 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,348

-

-

-

-

TANS Electronics

Latvia . 5,021 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,021

-

-

-

-

Problanco Electronics

Mexico . 4,147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,147

-

-

-

-

Continental Prestige Electronics

USA . 3,470 parts In-Stock

1+ parts

-

100+ parts

$0.349

1k+ parts

-

10k+ parts

-

3,470

-

$0.349

-

-

SupplyDigital Components

Austria . 744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

744

-

-

-

-

UHIMA Technologies

Türkiye . 469 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

469

-

-

-

-

Northwest PG Solutions

USA . 211 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

211

-

-

-

-

Overview

Elevate your power management solutions with the Onsemi 2SB824R, a top-of-the-line Power Bipolar Junction Transistor (BJT) designed for switching applications. With a maximum collector-emitter voltage of 50V and a robust collector current of 5A, this PNP transistor offers unparalleled reliability and performance. Its high DC current gain of 100 ensures optimal efficiency in various electronic circuits. Whether you're in need of a reliable transistor for industrial automation, consumer electronics, or automotive applications, the 2SB824R delivers unmatched value and versatility. Trust Onsemi's reputation for quality and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the transistor suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product suitable for switching purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in a variety of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic devices and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making the transistor ideal for applications where stability is crucial.

No. of Terminals: 3

The three terminals offer flexibility in circuit design and enable the transistor to be used in a wide range of configurations.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and efficient heat dissipation, improving overall performance and reliability.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures consistent and reliable amplification of input signals in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage levels without compromising performance.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making this product a dependable choice for various applications.

Maximum Collector Current (IC): 5 A

Capable of handling a maximum collector current of 5A, this transistor is suitable for high-power applications that require robust performance.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The terminal finish ensures good conductivity, corrosion resistance, and solderability, making the transistor durable and easy to use.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring ease of use in various electronic circuits and systems.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30 MHz, this transistor can operate efficiently in high-frequency switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB824R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB824R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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