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2SB826Q

Onsemi

2SB826Q by Onsemi

The Onsemi 2SB826Q is a PNP Power BJT with max. VCE of 50V and IC of 12A. With hFE of 70, it's ideal for switching applications in electronics due to its silicon element material and fT of 10MHz. The transistor comes in a plastic/epoxy package with flange mount style for through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,201 parts In-Stock

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Digiode

USA . 1,448 parts In-Stock

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Native Components

USA . 908 parts In-Stock

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$0.241

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$0.231

908

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Northwest PG Solutions

USA . 1,392 parts In-Stock

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$0.265

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TANS Electronics

Latvia . 5,779 parts In-Stock

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SupplyDigital Components

Austria . 5,328 parts In-Stock

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Kulean Microsystems

USA . 2,929 parts In-Stock

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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Corphita

USA . 894 parts In-Stock

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Problanco Electronics

Mexico . 732 parts In-Stock

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Corohmni

South Africa . 499 parts In-Stock

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Overview

Looking for a reliable and high-quality power BJT for your switching applications? Look no further than the Onsemi 2SB826Q. Manufactured by the trusted brand Onsemi, this PNP transistor offers superior performance and durability. Its flange mount package ensures easy installation, making it perfect for a variety of electronic projects. With a maximum collector current of 12 A and a minimum DC current gain of 70, the 2SB826Q provides excellent value and efficiency. Upgrade your electronics with this top-of-the-line transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body offers good insulation and protection for the transistor, ensuring its durability and reliability in various operating conditions.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration in circuits where PNP transistors are needed, providing compatibility with existing designs.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it easier to incorporate the transistor into electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and high efficiency, making it suitable for a wide range of electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement on circuit boards, facilitating the manufacturing process.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables secure connections to the circuit board, ensuring stable performance and reducing the risk of electrical failures.

No. of Terminals: 3

With three terminals, this transistor provides flexibility in circuit design and allows for versatile applications in various electronic devices.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and heat dissipation, improving the overall thermal performance and reliability of the transistor.

Minimum DC Current Gain (hFE): 70

The minimum DC current gain of 70 ensures consistent and reliable amplification of the input signals, resulting in stable and accurate performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high thermal conductivity and durability, enhancing the overall performance and reliability of the transistor.

Maximum Collector Current (IC): 12 A

The maximum collector current of 12 A allows for higher power handling capability, making it suitable for applications requiring high current loads.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures proper alignment, improving the overall reliability and performance of the transistor.

Nominal Transition Frequency (fT): 10 MHz

The nominal transition frequency of 10 MHz indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB826Q attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB826Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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