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2SB880

Onsemi

2SB880 by Onsemi

The Onsemi 2SB880 is a PNP power BJT with a Darlington configuration, ideal for switching applications. It offers a min hFE of 2000 and can handle up to 4A of collector current at 60V. This transistor features a silicon element, through-hole terminals, and a flange mount package style.

Median Price

$0.672

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 4,699 parts In-Stock

1+ parts

-

100+ parts

$0.647

1k+ parts

$0.537

10k+ parts

$0.479

4,699

-

$0.647

$0.537

$0.479

DigiKey

USA . 4,699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.810

10k+ parts

-

4,699

-

-

$0.810

-

Verical

USA . 4,699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.672

10k+ parts

-

4,699

-

-

$0.672

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 230 parts In-Stock

1+ parts

$0.436

100+ parts

-

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-

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230

$0.436

-

-

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Digiode

USA . 449 parts In-Stock

1+ parts

$0.504

100+ parts

-

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449

$0.504

-

-

-

DigiKey Marketplace

USA . 4,699 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,699

-

-

-

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Huijzer Components

Netherlands . 24 parts In-Stock

1+ parts

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24

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LittleDiode

UK . 15 parts In-Stock

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15

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 772 parts In-Stock

1+ parts

$0.077

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

772

$0.077

-

-

$0.074

Northwest PG Solutions

USA . 1,516 parts In-Stock

1+ parts

$0.085

100+ parts

-

1k+ parts

-

10k+ parts

$0.075

1,516

$0.085

-

-

$0.075

Corohmni

South Africa . 114 parts In-Stock

1+ parts

$0.436

100+ parts

-

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114

$0.436

-

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Corphita

USA . 1,811 parts In-Stock

1+ parts

$0.478

100+ parts

-

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1,811

$0.478

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Microchip USA

USA . 8,198 parts In-Stock

1+ parts

$3.315

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8,198

$3.315

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QUARKTWIN TECHNOLOGY LTD

USA . 17,116 parts In-Stock

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17,116

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SupplyDigital Components

Austria . 5,290 parts In-Stock

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5,290

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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TANS Electronics

Latvia . 2,920 parts In-Stock

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2,920

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Problanco Electronics

Mexico . 627 parts In-Stock

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627

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Continental Prestige Electronics

USA . 515 parts In-Stock

1+ parts

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100+ parts

$0.505

1k+ parts

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515

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$0.505

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Kulean Microsystems

USA . 194 parts In-Stock

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194

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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190

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Overview

Unlock the power of innovation with the 2SB880 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled quality and performance. Ideal for switching applications, this PNP transistor features a Darlington configuration with built-in diode and resistor, making it a versatile choice for a wide range of projects. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 2000, this transistor delivers exceptional reliability and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the 2SB880 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating additional components within the transistor package.

Transistor Application: SWITCHING

Designed for efficient switching applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Compatible with through-hole PCB assembly techniques.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and stability in various applications.

Minimum DC Current Gain (hFE): 2000

Ensures high amplification capabilities in circuit designs.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring up to 60 volts of collector-emitter voltage.

Transistor Element Material: SILICON

Provides reliable performance and efficiency in various operating conditions.

Maximum Collector Current (IC): 4 A

Capable of handling up to 4 amps of collector current.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Ensures good electrical conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplified terminal layout for easier circuit connections.

Nominal Transition Frequency (fT): 20 MHz

Ideal for high-frequency applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB880 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.03

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

2000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB880 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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