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2SB826S

Onsemi

2SB826S by Onsemi

The Onsemi 2SB826S is a PNP Power BJT with max. VCE of 50V and IC of 12A. With hFE of 140, it's ideal for switching applications at fT of 10MHz. This through-hole transistor in plastic/epoxy package suits flange mount configurations.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,287 parts In-Stock

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Vyrian

USA . 805 parts In-Stock

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805

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TANS Electronics

Latvia . 6,113 parts In-Stock

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Kulean Microsystems

USA . 5,849 parts In-Stock

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SupplyDigital Components

Austria . 5,002 parts In-Stock

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Problanco Electronics

Mexico . 4,695 parts In-Stock

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Corphita

USA . 2,236 parts In-Stock

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UHIMA Technologies

Türkiye . 358 parts In-Stock

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Corohmni

South Africa . 349 parts In-Stock

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Native Components

USA . 227 parts In-Stock

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Northwest PG Solutions

USA . 30 parts In-Stock

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Overview

Unleash the power of the Onsemi 2SB826S Power Bipolar Junction Transistor (BJT) for all your switching applications. With a high DC current gain of 140 and a maximum collector-emitter voltage of 50V, this PNP transistor offers reliable performance and efficiency. Manufactured by Onsemi, a trusted name in the industry known for their quality products, the 2SB826S is designed for single configuration and features a rectangular package body made of durable PLASTIC/EPOXY material. Whether you need to control motors, lights, or other electronic devices, this transistor provides the perfect solution with its 12A maximum collector current and 10 MHz nominal transition frequency. Upgrade your projects with the Onsemi 2SB826S and experience the difference in performance and reliability today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides excellent insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into PNP circuits, making this transistor ideal for switching applications that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit design and layout, making it easier to use in applications that require a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and reliable performance, making it a great choice for switching circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and efficient use of PCB space, making it suitable for compact electronic designs.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide secure and reliable connections, making it easier to integrate this transistor into through-hole PCBs or breadboards.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in circuits and offers flexibility in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy mounting and secure attachment to heat sinks or other components, enhancing thermal performance and reliability.

Minimum DC Current Gain (hFE): 140

With a minimum DC current gain of 140, this transistor provides consistent and reliable amplification of current in the circuit, ensuring stable performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50V allows for a wide range of voltage applications, making this transistor versatile and suitable for various voltage requirements.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and temperature stability, making it a preferred choice for electronic applications.

Maximum Collector Current (IC): 12 A

With a maximum collector current of 12A, this transistor can handle high current loads, making it suitable for power applications that require high current capabilities.

Terminal Position: SINGLE

The single terminal position simplifies the installation and connection process, making it easy to integrate this transistor into circuits and systems.

Nominal Transition Frequency (fT): 10 MHz

The nominal transition frequency of 10MHz indicates fast switching speeds and high-frequency performance, making this transistor suitable for high-speed applications and RF circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2SB826S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB826S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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