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TIP42BG

Onsemi

TIP42BG by Onsemi

TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

Median Price

$0.539

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$0.467

100+ parts

$0.467

1k+ parts

$0.467

10k+ parts

-

2,500

$0.467

$0.467

$0.467

-

Mouser Electronics

USA . 428 parts In-Stock

1+ parts

$1.180

100+ parts

$0.660

1k+ parts

$0.583

10k+ parts

$0.561

428

$1.180

$0.660

$0.583

$0.561

DigiKey

USA . 60 parts In-Stock

1+ parts

$1.690

100+ parts

$0.799

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-

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60

$1.690

$0.799

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Rochester

USA . 5,311 parts In-Stock

1+ parts

-

100+ parts

$0.520

1k+ parts

$0.431

10k+ parts

$0.385

5,311

-

$0.520

$0.431

$0.385

Verical

USA . 1,950 parts In-Stock

1+ parts

-

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$0.539

10k+ parts

$0.481

1,950

-

-

$0.539

$0.481

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 140 parts In-Stock

1+ parts

$0.404

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-

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140

$0.404

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.463

100+ parts

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600

$0.463

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Vyrian

USA . 7,714 parts In-Stock

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7,714

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Flip Electronics

USA . 1,950 parts In-Stock

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1,950

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Sea View Technologies

USA . 77 parts In-Stock

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77

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Bristol Electronics

USA . 77 parts In-Stock

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77

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,729 parts In-Stock

1+ parts

$0.361

100+ parts

-

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-

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1,729

$0.361

-

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Corphita

USA . 760 parts In-Stock

1+ parts

$0.382

100+ parts

-

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760

$0.382

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Corohmni

South Africa . 164 parts In-Stock

1+ parts

$0.425

100+ parts

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164

$0.425

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.454

100+ parts

-

1k+ parts

$0.436

10k+ parts

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1,000

$0.454

-

$0.436

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Argo Parts USA

USA . 1,917 parts In-Stock

1+ parts

$0.457

100+ parts

-

1k+ parts

-

10k+ parts

$0.444

1,917

$0.457

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-

$0.444

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.467

100+ parts

$0.467

1k+ parts

$0.467

10k+ parts

-

2,500

$0.467

$0.467

$0.467

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Continental Prestige Electronics

USA . 1,121 parts In-Stock

1+ parts

$0.655

100+ parts

$0.493

1k+ parts

$0.317

10k+ parts

$0.298

1,121

$0.655

$0.493

$0.317

$0.298

Aztec Data Supply Inc.

USA . 330 parts In-Stock

1+ parts

$1.254

100+ parts

-

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330

$1.254

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Andel Nordic

Denmark . 76 parts In-Stock

1+ parts

$1.840

100+ parts

-

1k+ parts

$1.286

10k+ parts

$1.286

76

$1.840

-

$1.286

$1.286

Microchip USA

USA . 2,721 parts In-Stock

1+ parts

$2.860

100+ parts

$2.840

1k+ parts

$2.830

10k+ parts

$2.820

2,721

$2.860

$2.840

$2.830

$2.820

SupplyDigital Components

Austria . 7,106 parts In-Stock

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Kulean Microsystems

USA . 3,356 parts In-Stock

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TANS Electronics

Latvia . 3,329 parts In-Stock

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Perfect Parts

USA . 1,822 parts In-Stock

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Kepictronics

USA . 1,800 parts In-Stock

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1,800

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Problanco Electronics

Mexico . 1,250 parts In-Stock

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UHIMA Technologies

Türkiye . 58 parts In-Stock

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58

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Overview

Enhance your electronic projects with the TIP42BG by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their reliable and durable components, this PNP transistor offers a maximum power dissipation of 65W and a maximum collector-emitter voltage of 80V. With a minimum DC current gain of 15, this transistor provides efficient performance and precise control. Whether you're a DIY enthusiast or a professional in the field, the TIP42BG offers exceptional value and versatility, making it a must-have component for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and lightweight design, ideal for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting in circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure connections and easy soldering in through-hole mounting.

Maximum Power Dissipation (Abs): 65 W

Provides high power handling capability, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy installation and mounting in flange applications.

Minimum DC Current Gain (hFE): 15

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively at high temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 80 V

Can withstand higher voltages, increasing the range of potential applications.

Transistor Element Material: SILICON

Provides efficient switching characteristics and reliability.

Maximum Collector Current (IC): 6 A

Capable of handling high collector currents, suitable for diverse load requirements.

Terminal Finish: TIN

Offers good conductivity and solderability, ensuring reliable connections.

Terminal Position: SINGLE

Simplifies circuit layout and connections, reducing chances of errors.

Case Connection: COLLECTOR

Facilitates efficient heat dissipation through direct connection to the collector.

Nominal Transition Frequency (fT): 3 MHz

Indicates fast switching speed and high-frequency operation, suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) TIP42BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

TIP42BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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