Loading...

MJD44H11T5G

Onsemi

MJD44H11T5G by Onsemi

MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,015 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,015

-

-

-

-

Digiode

USA . 2,495 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,495

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.811

100+ parts

$0.738

1k+ parts

$0.665

10k+ parts

-

600

$0.811

$0.738

$0.665

-

AZTECH Wire

Italy . 824 parts In-Stock

1+ parts

$16.240

100+ parts

-

1k+ parts

-

10k+ parts

-

824

$16.240

-

-

-

Metaverse IC Inc.

Canada . 38,652 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

38,652

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,287 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,287

-

-

-

-

SupplyDigital Components

Austria . 6,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,060

-

-

-

-

Kulean Microsystems

USA . 5,654 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,654

-

-

-

-

Problanco Electronics

Mexico . 4,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,199

-

-

-

-

Corphita

USA . 1,062 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,062

-

-

-

-

UHIMA Technologies

Türkiye . 727 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

727

-

-

-

-

TANS Electronics

Latvia . 721 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

721

-

-

-

-

Perfect Parts

USA . 641 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

641

-

-

-

-

Corohmni

South Africa . 68 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

68

-

-

-

-

Overview

Unlock the power of innovation with the MJD44H11T5G by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor is designed to elevate your projects to new heights. Whether you're in need of reliable switching solutions or looking to optimize performance, this NPN transistor is your go-to choice. With a maximum power dissipation of 20W and a collector current of 8A, the possibilities are endless. Trust in Onsemi's commitment to quality and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum Power Dissipation (Abs): 20 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 80 V

With a high voltage rating, this transistor can be used in systems where higher voltage operation is required.

Maximum Collector Current (IC): 8 A

Capable of handling high current levels, making it suitable for applications that require power switching.

Nominal Transition Frequency (fT): 85 MHz

Offers high frequency performance, allowing for fast switching speeds in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD44H11T5G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD44H11T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20