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2N6034G

Onsemi

2N6034G by Onsemi

2N6034G by Onsemi is a PNP BJT with 40V VCEO, 4A IC, and 25MHz fT. Ideal for amplifier applications, it features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Max power dissipation of 1.5W at 150 °C ensures reliable performance in various environments.

Median Price

$0.363

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

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Farnell

UK . 21,009 parts In-Stock

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$0.169

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Arrow

USA . 240 parts In-Stock

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$0.230

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$0.230

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Element14

Singapore . 906 parts In-Stock

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$1.210

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906

$1.210

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Rochester

USA . 16,415 parts In-Stock

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$0.363

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$0.301

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$0.269

16,415

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$0.363

$0.301

$0.269

Verical

USA . 10,112 parts In-Stock

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$0.377

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$0.336

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$0.336

Chip1Stop

Japan . 302 parts In-Stock

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Digiode

USA . 1,722 parts In-Stock

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$0.161

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DigiKey Marketplace

USA . 20,403 parts In-Stock

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Vyrian

USA . 4,839 parts In-Stock

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NAC Semi

USA . 1,000 parts In-Stock

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$0.808

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$0.808

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IBS Electronics

USA . 500 parts In-Stock

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$0.676

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$0.650

500

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$0.676

$0.650

Elcom Components

USA . 400 parts In-Stock

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400

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Bristol Electronics

USA . 261 parts In-Stock

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Atlantic Semiconductor

USA . 261 parts In-Stock

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TME

Poland . 10 parts In-Stock

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$0.332

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$0.332

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,529 parts In-Stock

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$0.144

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Corphita

USA . 2,025 parts In-Stock

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$0.152

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$0.152

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Continental Prestige Electronics

USA . 829 parts In-Stock

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$0.169

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Corohmni

South Africa . 209 parts In-Stock

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$0.169

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Native Components

USA . 820 parts In-Stock

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$18.020

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$18.020

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Northwest PG Solutions

USA . 713 parts In-Stock

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$19.822

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$17.840

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713

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$17.840

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AZTECH Wire

Italy . 472 parts In-Stock

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$21.880

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Perfect Parts

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TANS Electronics

Latvia . 5,581 parts In-Stock

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Kulean Microsystems

USA . 4,783 parts In-Stock

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Microchip USA

USA . 3,434 parts In-Stock

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Problanco Electronics

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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SupplyDigital Components

Austria . 821 parts In-Stock

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GreenTree Electronics

Israel . 468 parts In-Stock

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ChipstoGo Electronic ltd

UK . 398 parts In-Stock

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UHIMA Technologies

Türkiye . 107 parts In-Stock

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Overview

Elevate your electronic projects with the high-quality 2N6034G Power Bipolar Junction Transistor by Onsemi. Designed for amplifiers, this PNP transistor features a Darlington configuration with a built-in diode and resistor for enhanced performance. With a maximum collector current of 4A and a minimum DC current gain of 100, this transistor offers reliable power handling capabilities. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the potential of your designs with the 2N6034G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal conductivity and insulation, making the transistor reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and have high input impedance, making them suitable for various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain and built-in diode and resistor help simplify the circuit design and save space.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or systems.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5W, this transistor can handle moderate power levels effectively.

Maximum Operating Temperature: 150 °C

Operates reliably at high temperatures up to 150 °C, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 40 V

High collector-emitter voltage rating of 40V allows for versatile use in different voltage applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics, reliability, and compatibility with a wide range of applications.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents of up to 4A, making it suitable for power amplification tasks.

Nominal Transition Frequency (fT): 25 MHz

High transition frequency of 25MHz allows for fast switching speeds and high-frequency operation in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6034G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6034G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-086-9449, 5961010869449

NIIN

010869449

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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