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MJE210TG

Onsemi

MJE210TG by Onsemi

MJE210TG by Onsemi is a PNP BJT with 15W power dissipation, 40V max. collector-emitter voltage, and 5A max. collector current. Ideal for amplifier applications due to its 65MHz transition frequency and single terminal configuration in a rectangular package style.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 6,577 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.252

10k+ parts

$0.225

6,577

-

$0.304

$0.252

$0.225

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 629 parts In-Stock

1+ parts

$0.237

100+ parts

-

1k+ parts

-

10k+ parts

-

629

$0.237

-

-

-

Vyrian

USA . 4,418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,418

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 59 parts In-Stock

1+ parts

$0.224

100+ parts

-

1k+ parts

-

10k+ parts

-

59

$0.224

-

-

-

Corohmni

South Africa . 50 parts In-Stock

1+ parts

$0.249

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.249

-

-

-

AZTECH Wire

Italy . 1,204 parts In-Stock

1+ parts

$10.140

100+ parts

-

1k+ parts

-

10k+ parts

-

1,204

$10.140

-

-

-

Continental Prestige Electronics

USA . 10,150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.225

10k+ parts

-

10,150

-

-

$0.225

-

Kulean Microsystems

USA . 5,167 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,167

-

-

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SupplyDigital Components

Austria . 4,035 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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4,035

-

-

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Problanco Electronics

Mexico . 1,660 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,660

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-

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TANS Electronics

Latvia . 1,101 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,101

-

-

-

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UHIMA Technologies

Türkiye . 145 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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145

-

-

-

-

Overview

Unleash the power of innovation with the MJE210TG by Onsemi, a top-of-the-line Power Bipolar Junction Transistor (BJT). Manufactured with precision and expertise, this PNP transistor offers unparalleled performance and reliability in amplifier applications. With a maximum power dissipation of 15W and a maximum collector current of 5A, this transistor is designed to deliver exceptional results. Upgrade your projects with the MJE210TG and experience the quality and value that only Onsemi can provide. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components, making the product long-lasting.

Polarity or Channel Type: PNP

Suitable for certain types of circuits and applications, adding versatility to the product.

Configuration: SINGLE

Simplified design for easy integration into circuits, making it user-friendly.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio or signal amplification.

Package Shape: RECTANGULAR

Compact design for efficient use of space, especially in crowded circuit boards.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards, reducing installation time and improving overall reliability.

Maximum Power Dissipation (Abs): 15 W

High power handling capability, suitable for applications requiring high power output.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in equipment, reducing the risk of damage during operation.

Minimum DC Current Gain (hFE): 10

Ensures stable and consistent amplification of signals, improving overall performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in higher voltage circuits, increasing the product's compatibility with a wider range of applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance, making the product suitable for long-term use.

Maximum Collector Current (IC): 5 A

Handles high current loads, ensuring stability and reliability in power applications.

Terminal Finish: TIN

Corrosion-resistant finish for improved durability and long-term performance.

Terminal Position: SINGLE

Simplified connection configuration, making it easier to integrate into circuits.

Peak Reflow Temperature °C: 260

Withstands high temperatures during soldering processes, ensuring the product remains intact during assembly.

Nominal Transition Frequency (fT): 65 MHz

High frequency response for fast signal processing, ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE210TG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE210TG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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