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NJVBUB323ZT4G

Onsemi

NJVBUB323ZT4G by Onsemi

NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.

Median Price

$1.745

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$1.745

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50

$1.745

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Vyrian

USA . 4,206 parts In-Stock

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Digiode

USA . 1,664 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 7,824 parts In-Stock

1+ parts

$0.590

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$0.590

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Corohmni

South Africa . 201 parts In-Stock

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$1.710

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$1.710

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Argo Parts USA

USA . 4,756 parts In-Stock

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$1.745

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4,756

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Continental Prestige Electronics

USA . 797 parts In-Stock

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$1.745

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$1.710

797

$1.745

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$1.710

AZTECH Wire

Italy . 372 parts In-Stock

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$13.419

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372

$13.419

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Ampacity Inc.

Singapore . 654 parts In-Stock

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$39.050

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654

$39.050

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Component Stockers USA

USA . 534 parts In-Stock

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$99.990

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534

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Problanco Electronics

Mexico . 6,355 parts In-Stock

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Perfect Parts

USA . 2,794 parts In-Stock

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Microchip USA

USA . 2,473 parts In-Stock

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Corphita

USA . 1,942 parts In-Stock

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Kulean Microsystems

USA . 1,301 parts In-Stock

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SupplyDigital Components

Austria . 1,159 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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TANS Electronics

Latvia . 784 parts In-Stock

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Overview

Unleash the power of innovation with the NJVBUB323ZT4G by Onsemi, a top-quality Power BJT transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN Darlington transistor with built-in diode and resistor is designed for switching applications, making it ideal for a wide range of electronic devices. With a maximum collector-emitter voltage of 350V and a maximum operating temperature of 175°C, this transistor guarantees exceptional durability and efficiency. Elevate your projects with the NJVBUB323ZT4G and experience the superior quality and value that Onsemi products have to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic epoxy material makes the transistor lightweight and durable, ensuring longevity and reliability in various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplifier and switching circuits, offering good performance and versatility in applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making this transistor suitable for compact applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle high voltages and currents efficiently, making it ideal for controlling power circuits.

Surface Mount: YES

Surface mount capability allows for easy assembly on PCBs, enabling automated production processes and saving time and effort during manufacturing.

Maximum Power Dissipation (Abs): 150 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, ensuring reliable operation under demanding conditions.

Minimum DC Current Gain (hFE): 500

The high minimum DC current gain ensures stable and consistent amplification in circuits, enhancing performance and reliability.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows the transistor to operate efficiently in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 350 V

With a high maximum collector-emitter voltage rating, this transistor can handle large voltage levels, making it suitable for high voltage applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 10 A

The high maximum collector current rating allows the transistor to handle large currents, making it suitable for power switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring reliable connections in various environments.

Nominal Transition Frequency (fT): 2 MHz

The high nominal transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVBUB323ZT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

500

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVBUB323ZT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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