Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2N5883G
Onsemi
Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.
COLLECTOR
25 A
60 V
SINGLE
4
TO-204AA
O-MBFM-P2
e3
1
2
200 Cel
METAL
ROUND
FLANGE MOUNT
PNP
200 W
Not Qualified
Other Transistors
NO
MATTE TIN
PIN/PEG
BOTTOM
SWITCHING
SILICON
4 MHz
2N6107G
2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
LEADFORM OPTIONS ARE AVAILABLE
7 A
70 V
30
TO-220AB
R-PSFM-T3
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
40 W
TIN
THROUGH-HOLE
10 MHz
2N6109G
2N6109G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 7A. It is commonly used for switching applications and has a min DC current gain of 30 (hFE).
50 V
2N6111G
2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.
30 V
2N6338G
The Onsemi 2N6338G is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 25A, and max. power dissipation of 200W. Ideal for switching applications due to its single configuration and high transition frequency of 40MHz in a round package shape.
100 V
12
NPN
40 MHz
2N6487G
The Onsemi 2N6487G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 15A. It has a min. DC current gain of 5, suitable for switching applications with a max. power dissipation of 30W at an operating temp. of 150°C.
15 A
5
30 W
5 MHz
2N6490G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A;
2N6497G
The Onsemi 2N6497G is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 5A, and max. power dissipation of 80W. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a rectangular package style.
5 A
250 V
260
80 W
BD159G
The Onsemi BD159G is a NPN BJT transistor with 3 terminals and a max power dissipation of 20W. It has a min DC current gain of 30, operates at up to 150 °C, and can handle a collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration and flange mount package style.
HIGH RELIABILITY
.5 A
350 V
TO-225AA
20 W
AMPLIFIER
BD179G
The Onsemi BD179G is a NPN BJT transistor with 3 terminals, capable of handling up to 30W power dissipation. With a max collector-emitter voltage of 80V and max current of 3A, it's ideal for amplifier applications. Operating at temperatures up to 150 °C, this silicon-based transistor has a transition frequency of 3MHz.
3 A
80 V
15
3 MHz
BD238G
BD238G by Onsemi is a PNP BJT transistor with 80V VCEO, 2A IC, and 25W Ptot. Ideal for amplifier applications, it has hFE of 25, operates b/w -55 to 150 °C, and features a flange mount package style.
2 A
25
-55 Cel
25 W
BD244BG
BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.
6 A
65 W
BD435G
The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.
4 A
32 V
50
36 W
BD438G
The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.
45 V
40
BD440G
BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.
BD788G
BD788G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 15W power dissipation. Ideal for switching applications, it has a hFE of 5 and operates up to 150°C. The through-hole package style makes it suitable for various electronic designs.
TO-225
15 W
50 MHz
BD809G
The Onsemi BD809G is a NPN BJT transistor with 80V VCE, 10A IC, and 90W Ptot. Ideal for amplifier applications due to its single configuration and high transition frequency of 1.5MHz. Packaged in plastic/epoxy with through-hole terminals for easy mounting.
10 A
90 W
1.5 MHz
BD810G
BD810G by Onsemi is a PNP BJT transistor with 80V VCE, 10A IC, and 90W power dissipation. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
BF720T3G
BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.
.1 A
300 V
TO-261AA
R-PDSO-G4
SMALL OUTLINE
1.5 W
YES
GULL WING
DUAL
60 MHz
BUL146G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 6 A;
400 V
8
100 W
14 MHz
BUL45G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 12 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A;
7
75 W
12 MHz
BUV21G
BUV21G by Onsemi is a NPN Power BJT with 200V VCE, 40A IC, and 250W Ptot. Ideal for switching applications, it has a hFE of 10 and operates up to 200°C. The transistor's package style is flange mount with a round shape and collector case connection.
40 A
200 V
10
TO-204AE
e1
250 W
TIN SILVER COPPER
8 MHz
BUV22G
BUV22G by Onsemi is a NPN power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications due to its single configuration and high transition frequency of 8MHz. Its metal package body and flange mount style make it suitable for high-power requirements in various electronic systems.
BUV26G
BUV26G by Onsemi is a NPN Power BJT with 90V VCEO, 20A IC, and 85W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and tin terminal finish.
20 A
90 V
85 W
MJ14001G
The Onsemi MJ14001G is a PNP BJT transistor with 60V VCE, 60A IC, and 300W power dissipation. Ideal for switching applications, it has a min hFE of 5 and operates up to 200 °C. The package style is flange mount with a round shape and metal body material.
60 A
300 W
MJ14002G
The Onsemi MJ14002G is a NPN BJT transistor with 80V VCEO, 60A IC, and 300W Ptot. It is ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element material and flange mount package make it suitable for high-temperature environments up to 200°C.
MJ15002G
MJ15002G by Onsemi is a PNP BJT transistor with 200W power dissipation, 140V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.
140 V
2 MHz
MJ15011G
The Onsemi MJ15011G is a NPN BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with bottom terminal position.
MJ15022G
The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.
16 A
MJ15023G
The Onsemi MJ15023G is a PNP BJT transistor with 200V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 5. Its metal package with flange mount style ensures efficient heat dissipation at up to 200°C operating temperature.
MJB41CG
MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.
R-PSSO-G2
MJD3055G
MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.
MJD350G
MJD350G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 30 and tin finish on single terminal.
Tin (Sn)
MJE13009G
MJE13009G by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 2W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 6. Packaged in plastic/epoxy with flange mount style, it operates up to 150 °C making it suitable for various industrial uses.
12 A
6
2 W
MJE172G
MJE172G by Onsemi is a PNP BJT transistor with 80V VCEO, 3A IC, and 1.5W power dissipation. Ideal for switching applications with a min hFE of 12 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.
MJE180G
MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.
40 V
MJE18002G
MJE18002G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, max. collector current of 2A, and min. DC current gain of 6. It is used for switching applications due to its high power dissipation of 50W and operating temperature up to 150 °C in a flange mount package style.
450 V
50 W
13 MHz
MJE18004G
MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
MJE3439G
MJE3439G by Onsemi is a NPN power BJT with 15W Pd, 350V VCEO, and 0.3A IC. Ideal for high-power applications in industrial electronics due to its single configuration and flange mount package style. With a max operating temperature of 150°C, it offers reliable performance in various environments.
.3 A
15 MHz
MJE344G
The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.
MJE4343G
MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.
160 V
TO-247
125 W
1 MHz
MJE4353G
MJE4353G by Onsemi is a PNP BJT transistor with 160V VCEO, 16A IC, and 125W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
TO-218
MJE521G
MJE521G by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it offers a min hFE of 40 and features silicon element material.
135 Cel
MJL21195G
MJL21195G by Onsemi is a PNP BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's package style is flange mount with through-hole terminals in a rectangular shape.
TO-264AA
MJL21196G
The Onsemi MJL21196G is a NPN BJT transistor with 200W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max current of 16A, and transition frequency of 4MHz. The package style is flange mount with through-hole terminals in a rectangular shape.
MJW21194G
MJW21194G by Onsemi is a NPN Power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-temperature environments up to 150°C.
ISOLATED
MPS6717G
MPS6717G by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a max VCE of 80V. The package is cylindrical with through-hole terminals and can dissipate up to 2.5W power.
30 pF
TO-92
O-PBCY-T3
CYLINDRICAL
1 W
2.5 W
.5 V
MPS6717RLRAG
MPS6717RLRAG by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 50, and IC of 0.5A. Ideal for amplifier applications due to its high power dissipation (2.5W) and collector-emitter voltage of 80V. Its package style is cylindrical with through-hole terminals for easy mounting in various electronic circuits.
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