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MJL21195G

Onsemi

MJL21195G by Onsemi

MJL21195G by Onsemi is a PNP BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$4.710

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 100 parts In-Stock

1+ parts

$4.710

100+ parts

$2.211

1k+ parts

$1.702

10k+ parts

$1.688

100

$4.710

$2.211

$1.702

$1.688

Chip1Stop

Japan . 56 parts In-Stock

1+ parts

$9.370

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$9.370

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Avnet

USA . 225 parts In-Stock

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225

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Rochester

USA . 10 parts In-Stock

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$2.410

1k+ parts

$2.160

10k+ parts

$2.030

10

-

$2.410

$2.160

$2.030

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 988 parts In-Stock

1+ parts

$2.546

100+ parts

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988

$2.546

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Nova Conductors

Japan . 15 parts In-Stock

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$3.740

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$3.740

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Vyrian

USA . 12,285 parts In-Stock

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12,285

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Chip Stock

USA . 615 parts In-Stock

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615

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,790 parts In-Stock

1+ parts

$1.520

100+ parts

-

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3,790

$1.520

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Ampacity Inc.

Singapore . 57 parts In-Stock

1+ parts

$2.280

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57

$2.280

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Corphita

USA . 1,988 parts In-Stock

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$2.412

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$2.412

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Corohmni

South Africa . 115 parts In-Stock

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$2.680

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$2.680

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Argo Parts USA

USA . 1,446 parts In-Stock

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$3.335

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1,446

$3.335

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Continental Prestige Electronics

USA . 653 parts In-Stock

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$3.335

100+ parts

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$3.269

653

$3.335

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$3.269

AZTECH Wire

Italy . 367 parts In-Stock

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$15.139

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367

$15.139

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Microchip USA

USA . 3,540 parts In-Stock

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$15.176

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$15.176

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Perfect Parts

USA . 19,107 parts In-Stock

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SupplyDigital Components

Austria . 8,311 parts In-Stock

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TANS Electronics

Latvia . 5,602 parts In-Stock

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Lixinc

USA . 4,481 parts In-Stock

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Problanco Electronics

Mexico . 3,004 parts In-Stock

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Kepictronics

USA . 2,250 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$3.665

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$3.553

10k+ parts

$3.478

2,000

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$3.665

$3.553

$3.478

Kulean Microsystems

USA . 1,323 parts In-Stock

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UHIMA Technologies

Türkiye . 295 parts In-Stock

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GreenTree Electronics

Israel . 156 parts In-Stock

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iodParts Technologies Inc.

India . 56 parts In-Stock

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Authorized Procurement Solutions

USA . 56 parts In-Stock

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56

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Overview

Enhance your electronic projects with the MJL21195G by Onsemi, a high-quality Power BJT transistor designed for amplifier applications. Manufactured by Onsemi, known for their reliable and innovative products, this PNP transistor offers a maximum power dissipation of 200W and a maximum collector-emitter voltage of 250V. With a minimum DC current gain of 8, the MJL21195G provides superior performance and efficiency. Upgrade your designs today and experience the value and benefits that this transistor brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are simple to use and are ideal for basic amplifier circuits.

Maximum Power Dissipation (Abs): 200 W

The high maximum power dissipation allows the transistor to handle large amounts of power effectively.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage rating of 250V makes this transistor suitable for applications requiring high voltage operation.

Maximum Collector Current (IC): 16 A

The high maximum collector current rating of 16A allows the transistor to handle large current loads without overheating.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz indicates that this transistor can switch quickly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL21195G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL21195G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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