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MJL21193G

Onsemi

MJL21193G by Onsemi

MJL21193G by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.

Median Price

$5.358

Lifecycle Status

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25

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1k+

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Rochester

USA . 9,084 parts In-Stock

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$3.770

100+ parts

$3.690

1k+ parts

$3.620

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9,084

$3.770

$3.690

$3.620

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Arrow

USA . 50 parts In-Stock

1+ parts

$5.215

100+ parts

$3.504

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$2.720

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$2.563

50

$5.215

$3.504

$2.720

$2.563

Farnell

UK . 652 parts In-Stock

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$5.500

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$2.550

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$2.320

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652

$5.500

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$2.320

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DigiKey

USA . 364 parts In-Stock

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$6.260

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$3.037

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$2.475

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$6.260

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Newark

USA . 55 parts In-Stock

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$6.450

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Mouser Electronics

USA . 3,737 parts In-Stock

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$7.030

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$7.030

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Element14

Singapore . 672 parts In-Stock

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$8.890

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$4.140

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$3.680

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672

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EBV Elektronik

Germany . 75 parts In-Stock

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Chip1Stop

Japan . 75 parts In-Stock

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$3.130

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$3.130

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Verical

USA . 50 parts In-Stock

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$3.518

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$2.835

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$2.835

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Master Electronics

USA . 50 parts In-Stock

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$2.990

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$2.410

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$2.380

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$2.380

Avnet

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Distrelec

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Nova Conductors

Japan . 300 parts In-Stock

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$3.175

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$3.175

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Digiode

USA . 1,113 parts In-Stock

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$3.420

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$3.420

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TME

Poland . 84 parts In-Stock

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$5.910

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$3.390

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84

$5.910

$3.390

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Maritex

Poland . 38 parts In-Stock

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$9.333

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$5.630

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$4.758

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$9.333

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$4.758

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Chip Stock

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Flip Electronics

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IBS Electronics

USA . 1,425 parts In-Stock

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$3.394

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$3.324

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Vyrian

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NAC Semi

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$12.640

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ACDS - Activité Composants Distribution Service

France . 48 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 23 parts In-Stock

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Lantek

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,632 parts In-Stock

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$0.465

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$0.465

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Semicontronic

India . 606 parts In-Stock

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$1.870

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$1.823

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$1.814

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606

$1.870

$1.823

$1.814

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Ampacity Inc.

Singapore . 952 parts In-Stock

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$2.580

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$2.580

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Corohmni

South Africa . 323 parts In-Stock

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$2.640

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Argo Parts USA

USA . 2,189 parts In-Stock

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$3.175

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Netroflash

USA . 2,000 parts In-Stock

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$3.175

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Corphita

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$3.240

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Continental Prestige Electronics

USA . 2,614 parts In-Stock

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$3.700

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$2.740

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$3.700

$2.740

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Component Stockers USA

USA . 5,554 parts In-Stock

1+ parts

$5.330

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$3.920

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$5.440

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5,554

$5.330

$3.920

$5.440

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Microchip USA

USA . 3,477 parts In-Stock

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$15.568

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Perfect Parts

USA . 87,612 parts In-Stock

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iodParts Technologies Inc.

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 9,298 parts In-Stock

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Kulean Microsystems

USA . 7,993 parts In-Stock

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Problanco Electronics

Mexico . 7,778 parts In-Stock

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SupplyDigital Components

Austria . 5,663 parts In-Stock

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TANS Electronics

Latvia . 5,280 parts In-Stock

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Kepictronics

USA . 1,800 parts In-Stock

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Assy Fe

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Eastek

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Overview

Unleash the power of innovation with the MJL21193G by Onsemi, a top-tier manufacturer known for excellence in quality and reliability. This Power BJT transistor is designed for amplifier applications, offering a maximum power dissipation of 200W and a collector current of 16A. With a compact rectangular package and single configuration, this PNP transistor is ideal for a wide range of projects where high performance is essential. Elevate your designs with the MJL21193G and experience superior functionality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP configuration offers high power gain and low noise performance, making it suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes installation easier, saving time and effort.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high power dissipation and reliable performance.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminals provide sturdy connections and easy soldering, ensuring a secure electrical connection.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs): 200 W

The high maximum power dissipation of 200W allows for operation in demanding environments without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and versatility in mounting options for various applications.

Minimum DC Current Gain (hFE): 8

The minimum DC current gain of 8 ensures consistent and stable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage rating of 250V allows for safe and reliable operation in high voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and durability.

Maximum Collector Current (IC): 16 A

The high maximum collector current of 16A allows for handling large electrical currents with ease.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of errors in circuit connections.

Case Connection: ISOLATED

The isolated case connection protects the transistor from external interference and ensures stable operation.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz allows for fast signal switching and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL21193G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL21193G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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