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MJL21196G

Onsemi

MJL21196G by Onsemi

The Onsemi MJL21196G is a NPN BJT transistor with 200W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max current of 16A, and transition frequency of 4MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$5.160

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Farnell

UK . 225 parts In-Stock

1+ parts

$5.160

100+ parts

$2.100

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$2.040

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225

$5.160

$2.100

$2.040

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DigiKey

USA . 134 parts In-Stock

1+ parts

$6.140

100+ parts

$2.970

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$2.410

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134

$6.140

$2.970

$2.410

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Element14

Singapore . 225 parts In-Stock

1+ parts

$8.800

100+ parts

$3.590

1k+ parts

$3.480

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225

$8.800

$3.590

$3.480

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Avnet

USA . 150 parts In-Stock

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150

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Verical

USA . 125 parts In-Stock

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$2.850

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125

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$2.850

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Rochester

USA . 95 parts In-Stock

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-

100+ parts

$2.410

1k+ parts

$2.160

10k+ parts

$2.030

95

-

$2.410

$2.160

$2.030

Flip Electronics (Authorized)

USA . 48 parts In-Stock

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48

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Distributors (In-Stock)

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Digiode

USA . 1,651 parts In-Stock

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$2.546

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-

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1,651

$2.546

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Electronics Source Co.

Thailand . 830 parts In-Stock

1+ parts

$3.002

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-

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830

$3.002

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.390

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50

$3.390

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

USA . 10,202 parts In-Stock

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ComSIT Distribution GmbH

Germany . 140 parts In-Stock

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140

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ComSIT USA

USA . 140 parts In-Stock

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140

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Flip Electronics

USA . 48 parts In-Stock

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48

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Cogito LLC

Ukraine . 16 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 12,255 parts In-Stock

1+ parts

$0.633

100+ parts

$0.633

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$0.633

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12,255

$0.633

$0.633

$0.633

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Aztec Data Supply Inc.

USA . 13,008 parts In-Stock

1+ parts

$1.570

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13,008

$1.570

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Ampacity Inc.

Singapore . 196 parts In-Stock

1+ parts

$2.280

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196

$2.280

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Semicontronic

India . 196 parts In-Stock

1+ parts

$2.280

100+ parts

$2.223

1k+ parts

$2.212

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196

$2.280

$2.223

$2.212

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Corphita

USA . 1,110 parts In-Stock

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$2.412

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1,110

$2.412

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Corohmni

South Africa . 494 parts In-Stock

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$2.680

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494

$2.680

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Component Stockers USA

USA . 2,712 parts In-Stock

1+ parts

$3.080

100+ parts

$2.930

1k+ parts

$2.830

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2,712

$3.080

$2.930

$2.830

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Continental Prestige Electronics

USA . 1,837 parts In-Stock

1+ parts

$3.390

100+ parts

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$3.322

1,837

$3.390

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$3.322

Argo Parts USA

USA . 1,515 parts In-Stock

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$3.390

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1,515

$3.390

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Netroflash

USA . 1,000 parts In-Stock

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$3.390

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$3.322

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1,000

$3.390

$3.322

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Perfect Parts

USA . 20,058 parts In-Stock

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Lixinc

USA . 13,163 parts In-Stock

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Microchip USA

USA . 8,362 parts In-Stock

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8,362

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TANS Electronics

Latvia . 8,019 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,680 parts In-Stock

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6,680

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Robosynatics

Brazil . 5,629 parts In-Stock

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Lucentia Tech

USA . 5,629 parts In-Stock

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$0.951

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$0.931

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$0.931

5,629

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$0.931

$0.931

SupplyDigital Components

Austria . 5,215 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,824 parts In-Stock

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2,824

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Kulean Microsystems

USA . 1,516 parts In-Stock

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1,516

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Metaverse IC Inc.

Canada . 508 parts In-Stock

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Kepictronics

USA . 140 parts In-Stock

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iodParts Technologies Inc.

India . 140 parts In-Stock

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140

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GreenTree Electronics

Israel . 75 parts In-Stock

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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Overview

Enhance your amplifier performance with the MJL21196G by Onsemi. Crafted with top-quality materials and advanced technology, this Power Bipolar Junction Transistor offers unparalleled reliability and efficiency. Ideal for a wide range of applications, from audio amplifiers to power supplies, this NPN transistor delivers a robust 200W power dissipation and a maximum collector current of 16A. With a high DC current gain and a nominal transition frequency of 4MHz, the MJL21196G ensures optimal performance in every use. Trust Onsemi's expertise and elevate your projects with this exceptional transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the body material makes this transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for easy integration into existing circuit designs, making it a versatile choice for projects.

Configuration: SINGLE

The single configuration simplifies the circuit design process and reduces complexity in wiring, making it user-friendly.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures optimal performance and efficiency in amplifying signals.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, saving space in circuit layouts and making it suitable for applications with limited space.

Terminal Form: THROUGH-HOLE

The through-hole terminal form offers secure connections and ease of soldering, ensuring a reliable connection in various electronic devices.

No. of Terminals: 3

With three terminals, this transistor is easy to install and connect in circuits, making it user-friendly for DIY projects or professional applications.

Maximum Power Dissipation (Abs): 200 W

The high maximum power dissipation of 200 W allows for reliable operation even under heavy loads, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure mounting option, ideal for applications where stability and durability are essential.

Minimum DC Current Gain (hFE): 8

With a minimum DC current gain of 8, this transistor ensures efficient signal amplification and reliable performance in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures stable performance in harsh environments or under heavy loads.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage of 250 V allows for reliable operation in circuits with higher voltages, making it versatile for various applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent performance characteristics, such as high stability, low noise, and wide operating temperature range.

Maximum Collector Current (IC): 16 A

With a maximum collector current of 16 A, this transistor can handle high current loads, making it suitable for power applications or motor control circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections, increasing the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection in circuits, reducing the chances of errors or wiring issues.

Nominal Transition Frequency (fT): 4 MHz

With a nominal transition frequency of 4 MHz, this transistor offers high-speed switching capabilities and is suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL21196G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL21196G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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