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MJL21196

Onsemi

MJL21196 by Onsemi

The Onsemi MJL21196 is a NPN BJT transistor with 250V VCE, 16A IC, and 200W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

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1k+

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Digiode

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Vyrian

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ACDS - Activité Composants Distribution Service

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LittleDiode

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Kulean Microsystems

USA . 6,979 parts In-Stock

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TANS Electronics

Latvia . 4,863 parts In-Stock

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Problanco Electronics

Mexico . 4,304 parts In-Stock

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SupplyDigital Components

Austria . 3,408 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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Kepictronics

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the MJL21196 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for a wide range of switching applications. Manufactured by industry leader Onsemi, this NPN transistor boasts a maximum power dissipation of 200W and a maximum collector-emitter voltage of 250V. With a minimum DC current gain of 8 and a maximum operating temperature of 150 °C, the MJL21196 is designed to deliver exceptional results in any project. Trust in Onsemi's expertise and elevate your designs with the MJL21196.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for demanding environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their high efficiency.

Configuration: SINGLE

Having a single configuration simplifies circuit design and makes installation easier.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation capability, this transistor can handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 250 V

Capable of handling high voltage levels, this transistor is suitable for applications that require high voltage operation.

Maximum Collector Current (IC): 16 A

With a high collector current rating, this transistor can handle large current flows without the risk of damage.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency of this transistor allows for faster response times in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL21196 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL21196 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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