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SINGLE Power Bipolar Junction Transistors (BJT) 418

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPSW42G by Onsemi

MPSW42G

Onsemi

MPSW42G by Onsemi is a NPN BJT with 300V VCE, 0.5A IC, and 40 hFE. It is used in power applications due to its 2.5W Pdiss and -55 °C to 150°C operating temp range. The transistor's through-hole package makes it suitable for various cylindrical style designs.

.5 A

3 pF

300 V

SINGLE

40

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

50 MHz

.5 V

MPSW55G by Onsemi

MPSW55G

Onsemi

The Onsemi MPSW55G is a PNP BJT transistor with max VCEsat of 0.5V, hFE of 50, and max IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 50MHz and low collector-emitter voltage of 60V. With a package style of cylindrical, it can dissipate up to 2.5W power in ambient temperatures up to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

MPSW55RLRAG by Onsemi

MPSW55RLRAG

Onsemi

MPSW55RLRAG by Onsemi is a PNP BJT transistor with a max VCEsat of 0.5V, ideal for amplifier applications. It has a min hFE of 50 and can handle a max collector-emitter voltage of 60V. With a package style of cylindrical and terminal finish of Tin Silver Copper, it operates b/w -55 to 150 °C.

.5 A

15 pF

60 V

SINGLE

50

TO-92

O-PBCY-T3

e1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

2.5 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

.5 V

TIP2955G by Onsemi

TIP2955G

Onsemi

TIP2955G by Onsemi is a PNP BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals.

COLLECTOR

15 A

60 V

SINGLE

5

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

90 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2.5 MHz

TIP30G by Onsemi

TIP30G

Onsemi

TIP30G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 30W, max collector-emitter voltage of 40V, and max collector current of 1A. With a min hFE of 15 and operating temp up to 150 °C, it's suitable for various electronic circuits requiring high power handling capabilities.

COLLECTOR

1 A

40 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

30 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP33CG by Onsemi

TIP33CG

Onsemi

TIP33CG by Onsemi is a NPN BJT transistor with 80W power dissipation, 100V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min hFE of 20 and operates at up to 150 °C. Its package style is flange mount with matte tin terminal finish.

COLLECTOR

10 A

100 V

SINGLE

20

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

80 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP35AG by Onsemi

TIP35AG

Onsemi

TIP35AG by Onsemi is a NPN Power BJT with 125W power dissipation, 60V max collector-emitter voltage, and 25A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min DC current gain of 15 and nominal transition frequency of 3MHz.

COLLECTOR

25 A

60 V

SINGLE

15

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

125 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP41AG by Onsemi

TIP41AG

Onsemi

TIP41AG by Onsemi is a NPN power BJT with 65W max power dissipation, 60V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The transistor comes in a plastic/epoxy package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42AG by Onsemi

TIP42AG

Onsemi

TIP42AG by Onsemi is a PNP BJT transistor with 65W power dissipation, 6A collector current, and 150°C max operating temp. Ideal for switching applications, it has a min hFE of 15 and operates at a max VCE of 60V in a rectangular package with through-hole terminals.

COLLECTOR

6 A

60 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

TIP42BG by Onsemi

TIP42BG

Onsemi

TIP42BG by Onsemi is a PNP power BJT with 65W max power dissipation, 80V max collector-emitter voltage, and 6A max collector current. It is ideal for switching applications due to its single configuration and through-hole terminal form. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

COLLECTOR

6 A

80 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

65 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

STD724T4 by STMicroelectronics

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

30

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

100 MHz

TIP33AG by Onsemi

TIP33AG

Onsemi

TIP33AG by Onsemi is a NPN power BJT with 80W max power dissipation, ideal for switching applications. It has a max collector-emitter voltage of 60V, 10A max collector current, and operates up to 150 °C. With a min hFE of 20 and fT of 3MHz, it's suitable for high-power electronic circuits in various industries.

10 A

60 V

SINGLE

20

TO-218

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

80 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

NJVMJD44H11RLG by Onsemi

NJVMJD44H11RLG

Onsemi

NJVMJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it operates up to 150°C and has an hFE of at least 40. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

STF724 by STMicroelectronics

STF724

STMicroelectronics

STF724 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 1.4 W and a collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BUL804 by STMicroelectronics

BUL804

STMicroelectronics

BUL804 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages up to 450V. Ideal for high-power circuits with through-hole mounting.

4 A

450 V

SINGLE

10

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HD1520FX by STMicroelectronics

HD1520FX

STMicroelectronics

HD1520FX by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 64W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

ISOLATED

15 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

64 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1750JL by STMicroelectronics

HD1750JL

STMicroelectronics

HD1750JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 24A. Ideal for high-performance applications in electronics.

24 A

800 V

SINGLE

5.5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1760JL by STMicroelectronics

HD1760JL

STMicroelectronics

HD1760JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 36A. Ideal for high-performance applications in various electronic circuits.

36 A

800 V

SINGLE

5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

MJD44H11T5G by Onsemi

MJD44H11T5G

Onsemi

MJD44H11T5G by Onsemi is a NPN Power BJT with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its small outline package makes it suitable for surface mount designs.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

ST600K by STMicroelectronics

ST600K

STMicroelectronics

ST600K by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages up to 120V. Ideal for efficient power management in electronic circuits.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

12.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST631K by STMicroelectronics

ST631K

STMicroelectronics

ST631K by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Ideal for efficient circuit designs in various electronic devices.

1 A

120 V

SINGLE

50

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

12.5 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJL0281A by Onsemi

MJL0281A

Onsemi

The Onsemi MJL0281A is a NPN BJT transistor with max. Vce of 260V and Ic of 15A. It has hFE of 75, suitable for amplifier applications. The package style is flange mount with through-hole terminals, made of silicon material for high performance.

HIGH RELIABILITY

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJL0302A by Onsemi

MJL0302A

Onsemi

The Onsemi MJL0302A is a PNP Power BJT with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a hFE of 75 and SILICON element. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style and TIN LEAD finish.

HIGH RELIABILITY

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

Not Qualified

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

BD234G by Onsemi

BD234G

Onsemi

BD234G by Onsemi is a PNP BJT transistor with 45V VCEO, 2A IC, and 25W power dissipation. Ideal for amplifier applications, it has a hFE of 25 and operates up to 150°C. The package style is flange mount with a rectangular shape and matte tin finish in a through-hole terminal form.

2 A

45 V

SINGLE

25

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

3 MHz

MD2310FX by STMicroelectronics

MD2310FX

STMicroelectronics

STMicroelectronics' MD2310FX is a NPN BJT transistor with 700V VCE, 14A IC, and 62W power dissipation. Ideal for amplifier applications, it has a min hFE of 6 and operates up to 150°C. The package is rectangular with through-hole terminals in matte tin finish.

ISOLATED

14 A

700 V

SINGLE

6

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

62 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST1802FX by STMicroelectronics

ST1802FX

STMicroelectronics

ST1802FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

10 A

600 V

SINGLE

4

R-PSFM-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST2111FX by STMicroelectronics

ST2111FX

STMicroelectronics

ST2111FX by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max collector-emitter voltage of 700V, a min DC current gain (hFE) of 4.5, and supports up to 12A collector current. Ideal for power management in electronic circuits.

ISOLATED

12 A

700 V

SINGLE

4.5

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJE210TG by Onsemi

MJE210TG

Onsemi

MJE210TG by Onsemi is a PNP BJT with 15W power dissipation, 40V max. collector-emitter voltage, and 5A max. collector current. Ideal for amplifier applications due to its 65MHz transition frequency and single terminal configuration in a rectangular package style.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

15 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

MJE210T by Onsemi

MJE210T

Onsemi

MJE210T by Onsemi is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its hFE of 10 and fT of 65MHz. Packaged in plastic/epoxy with through-hole terminals, it operates up to 150 °C.

5 A

40 V

SINGLE

10

TO-225

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

1.5 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

65 MHz

MJW0281A by Onsemi

MJW0281A

Onsemi

The Onsemi MJW0281A is a NPN BJT transistor with 260V VCEO, 15A IC, and 150W Ptot. Ideal for amplifier applications due to its high hFE of 75 and low VCEsat of 1V. With a max operating temperature of 150 °C, it offers reliable performance in various environments.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

MJW0302A by Onsemi

MJW0302A

Onsemi

MJW0302A by Onsemi is a PNP BJT transistor with VCEsat of 1V, hFE of 75, and IC of 15A. Ideal for amplifier applications due to its high power dissipation of 150W and max operating temperature of 150 °C. Package style is flange mount with rectangular shape and through-hole terminals.

COLLECTOR

15 A

400 pF

260 V

SINGLE

75

TO-247

R-PSFM-T3

e0

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

150 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

1 V

NJD2873RL by Onsemi

NJD2873RL

Onsemi

NJD2873RL by Onsemi is a NPN BJT transistor with 50V VCEO, 2A IC, and 15W Ptot. Ideal for amplifier applications, it has hFE of 40, fT of 65MHz, and operates up to 175 °C. This Gull Wing package with tin lead finish is surface mountable and features a small outline design.

COLLECTOR

2 A

50 V

SINGLE

40

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

SINGLE

AMPLIFIER

SILICON

65 MHz

BD245A-S by Bourns

BD245A-S

Bourns

BD245A-S by Bourns is a NPN BJT transistor with max. 60V VCE, 10A IC, and min. hFE of 4. Ideal for switching applications at up to 150°C operating temp in through-hole package style.

COLLECTOR

10 A

60 V

SINGLE

4

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BD743B-S by Bourns

BD743B-S

Bourns

The Bourns BD743B-S is a NPN power BJT with 80V VCE, 15A IC, and 90W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals for easy mounting.

COLLECTOR

15 A

80 V

SINGLE

5

TO-220AB

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

90 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJL0281AG by Onsemi

MJL0281AG

Onsemi

The Onsemi MJL0281AG is a NPN BJT transistor with 260V VCE, 15A IC, and 30MHz fT. Ideal for amplifier applications, it has a min hFE of 75 and features a PLASTIC/EPOXY package with FLANGE MOUNT style.

15 A

260 V

SINGLE

75

TO-264AA

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2N5154S1 by STMicroelectronics

2N5154S1

STMicroelectronics

2N5154S1 from STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.5V, 35W power dissipation, and operates b/w -65 °C to 200 °C. Its compact no-lead design enhances efficiency in various electronic circuits.

HIGH RELIABILITY

COLLECTOR

5 A

250 pF

80 V

SINGLE

40

R-XBCC-N3

1

3

200 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

NPN

3.3 W

35 W

Not Qualified

YES

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

1300 ns

500 ns

1.5 V

2ST1480FP by STMicroelectronics

2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

ISOLATED

5 A

80 V

SINGLE

50

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

120 MHz

BULT3P3 by STMicroelectronics

BULT3P3

STMicroelectronics

BULT3P3 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 32W, operates up to 150 °C, and supports collector-emitter voltages up to 200V. Ideal for efficient circuit designs in various electronic devices.

3 A

200 V

SINGLE

4

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

32 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST13003N by STMicroelectronics

ST13003N

STMicroelectronics

ST13003N from STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for various electronic circuits requiring reliable performance.

1 A

400 V

SINGLE

5

TO-126

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

20 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF826 by STMicroelectronics

STF826

STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BUL704 by STMicroelectronics

BUL704

STMicroelectronics

BUL704 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

4 A

400 V

SINGLE

14

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

HD1530FX by STMicroelectronics

HD1530FX

STMicroelectronics

HD1530FX by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 70W and a collector-emitter voltage of 700V. It operates at up to 150 °C with a min DC current gain of 5.5. Ideal for high-performance applications in various electronic circuits.

26 A

700 V

SINGLE

5.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

70 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1530JL by STMicroelectronics

HD1530JL

STMicroelectronics

HD1530JL by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

26 A

700 V

SINGLE

5

TO-264AA

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

ST8812FP by STMicroelectronics

ST8812FP

STMicroelectronics

ST8812FP by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 36W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-power circuits with through-hole mounting.

ISOLATED

7 A

600 V

SINGLE

4.5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

36 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

ST8812FX by STMicroelectronics

ST8812FX

STMicroelectronics

ST8812FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 50W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

ISOLATED

7 A

600 V

SINGLE

4.5

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

50 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF817A by STMicroelectronics

STF817A

STMicroelectronics

STF817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.4W and collector current of 1.5A. It operates up to 150 °C with an 80V collector-emitter voltage. Ideal for compact electronic designs due to its small outline package.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-F4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

DUAL

30

SWITCHING

SILICON

50 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz