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BD743B-S

Bourns

BD743B-S by Bourns

The Bourns BD743B-S is a NPN power BJT with 80V VCE, 15A IC, and 90W Ptot. Ideal for switching applications, it has a min hFE of 5 and operates up to 150°C. The transistor comes in a rectangular package with through-hole terminals for easy mounting.

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Overview

Upgrade your electronic projects with the Bourns BD743B-S Power Bipolar Junction Transistor. Manufactured by Bourns, a trusted name in electronics, this NPN transistor offers superior performance and reliability for switching applications. With a maximum power dissipation of 90W and a maximum collector-emitter voltage of 80V, this transistor is designed to handle high-power tasks with ease. Whether you're a hobbyist or a professional, the BD743B-S delivers the value, benefits, and advantages you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE

Single configuration transistors are easier to work with and integrate into circuits, making the overall design simpler.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and mounting in circuit boards or other electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering during assembly, improving overall reliability.

No. of Terminals: 3

Having 3 terminals allows for versatile circuit configurations and compatibility with a wide range of applications.

Maximum Power Dissipation (Abs): 90 W

High power dissipation capability ensures the transistor can handle heavy loads and operate in demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy and secure mounting options, making installation straightforward.

Minimum DC Current Gain (hFE): 5

Having a minimum DC current gain of 5 ensures reliable amplification and signal processing capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating provides safety and reliability in high voltage applications.

Transistor Element Material: SILICON

Silicon material for the transistor element offers excellent performance characteristics and durability.

Maximum Collector Current (IC): 15 A

A maximum collector current of 15 A allows the transistor to handle high current loads with ease, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER

Tin silver copper terminal finish ensures good conductivity and corrosion resistance, enhancing the overall reliability of the connections.

Terminal Position: SINGLE

Single terminal position simplifies the wiring and connection process, making it easier to integrate the transistor into circuits.

Case Connection: COLLECTOR

Having the case connected to the collector ensures proper grounding and heat dissipation, improving overall performance and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD743B-S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Bourns

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD743B-S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Bourns

Bourns, Inc. is an American electronics company that develops, manufactures and supplies electronic components for a variety of industries including automotive, industrial, instrumentation, medical electronics, consumer equipment and portable electronics. Established in Altadena, California in 1947 by Marlan and Rosemary Bourns, graduates of the University of Michigan, the company was founded to develop and sell electronic components and sensors to the aerospace industry. Bourns has 15 manufacturing facilities around the world and has continued growing through the development of new products and technologies as well as through acquisitions. The company has approximately 9000 employees worldwide.

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