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SINGLE Power Bipolar Junction Transistors (BJT) 418

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUL3P5 by STMicroelectronics

BUL3P5

STMicroelectronics

BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.

3 A

400 V

SINGLE

4

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STD1360T4 by STMicroelectronics

2STD1360T4

STMicroelectronics

2STD1360T4 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector-emitter voltage of 60V, and operates up to 150 °C. Ideal for compact designs with its surface mount configuration.

COLLECTOR

3 A

60 V

SINGLE

160

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

130 MHz

2SB817C-1E by Onsemi

2SB817C-1E

Onsemi

The Onsemi 2SB817C-1E is a PNP BJT transistor with max. collector-emitter voltage of 140V and max. collector current of 12A. With a min DC current gain of 35 and nominal transition frequency of 10MHz, it's ideal for switching applications in various electronic circuits.

12 A

140 V

SINGLE

35

TO-247

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

10 MHz

FZT692BQTA by Diodes Incorporated

FZT692BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 pF

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

ZXTP19100CZQTA by Diodes Incorporated

ZXTP19100CZQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 142 MHz; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSSO-F3;

HIGH RELIABILITY

COLLECTOR

2 A

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SILICON

142 MHz

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP6925H6327XTSA1 by Infineon Technologies

BCP6925H6327XTSA1

Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP51-16-TP by Micro Commercial Components

BCP51-16-TP

Micro Commercial Components

BCP51-16-TP by Micro Commercial Components is a PNP BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power applications in small outline packages, it operates b/w -55 to 150°C with a max VCE of 45V.

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCP55-16-TP by Micro Commercial Components

BCP55-16-TP

Micro Commercial Components

BCP55-16-TP by Micro Commercial Components is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages, operating b/w -55°C to 150°C. Suitable for surface mount designs needing a compact and efficient transistor solution.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCX5316H6327XTSA1 by Infineon Technologies

BCX5316H6327XTSA1

Infineon Technologies

Infineon's BCX5316H6327XTSA1 is a PNP BJT with 2W power dissipation, hFE of 100, and IC of 1A. Ideal for surface mount applications, it operates up to 150°C making it suitable for power management in various electronic devices.

1 A

SINGLE

100

e3

1

1

150 Cel

245

PNP

2 W

Other Transistors

YES

TIN

FZT657QTA by Diodes Incorporated

FZT657QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): .5 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

COLLECTOR

.5 A

300 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

30 MHz

FZT795AQTA by Diodes Incorporated

FZT795AQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.5 A

140 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FZT949QTA by Diodes Incorporated

FZT949QTA

Diodes Incorporated

FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.

HIGH RELIABILITY

COLLECTOR

5.5 A

30 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

100 MHz

FZT690BQTA by Diodes Incorporated

FZT690BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2SA1962O(Q) by Toshiba

2SA1962O(Q)

Toshiba

Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2SC5242O(Q) by Toshiba

2SC5242O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

30 MHz

TTC5460B,Q(S by Toshiba

TTC5460B,Q(S

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5.5 MHz; Maximum Collector Current (IC): .05 A; Package Body Material: PLASTIC/EPOXY;

.05 A

800 V

SINGLE

15

TO-126

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

5.5 MHz

NJVMJD148T4G-VF01 by Onsemi

NJVMJD148T4G-VF01

Onsemi

NJVMJD148T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 30, VCEO of 45V, and IC of 4A. Ideal for amplifier applications, it operates b/w -55 to 150 °C. This small outline package has Gull Wing terminals and is AEC-Q101 compliant.

COLLECTOR

4 A

45 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD253T4G-VF01 by Onsemi

NJVMJD253T4G-VF01

Onsemi

NJVMJD253T4G-VF01 by Onsemi is a PNP BJT transistor with hFE of 15, VCEO of 100V, and IC of 4A. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 40MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.

COLLECTOR

4 A

100 V

SINGLE

15

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AMPLIFIER

SILICON

40 MHz

NJVMJD32CT4G-VF01 by Onsemi

NJVMJD32CT4G-VF01

Onsemi

NJVMJD32CT4G-VF01 by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100V and a max collector current of 3A. It is commonly used as an amplifier in various applications due to its small outline package style, high transition frequency of 3MHz, and wide operating temperature range from -65°C to 150°C.

COLLECTOR

3 A

100 V

SINGLE

10

R-PSSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

3 MHz

NJVMJD44H11RLG-VF01 by Onsemi

NJVMJD44H11RLG-VF01

Onsemi

NJVMJD44H11RLG-VF01 by Onsemi is a NPN BJT transistor with 80V VCE, 8A IC, and 85MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

85 MHz

NJVMJD45H11RLG-VF01 by Onsemi

NJVMJD45H11RLG-VF01

Onsemi

NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.

COLLECTOR

8 A

80 V

SINGLE

40

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

90 MHz

NSV1C300ET4G-VF01 by Onsemi

NSV1C300ET4G-VF01

Onsemi

NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

COLLECTOR

3 A

100 V

SINGLE

50

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

NSV1C301ET4G-VF01 by Onsemi

NSV1C301ET4G-VF01

Onsemi

NSV1C301ET4G-VF01 by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 80, VCE of 100V, and IC of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance.

COLLECTOR

3 A

100 V

SINGLE

80

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

120 MHz

2SC5171,Q(J by Toshiba

2SC5171,Q(J

Toshiba

2SC5171,Q(J by Toshiba is a NPN BJT transistor with max. Vce of 180V and max. Ic of 2A. It has hFE of 50, ideal for amplifier applications due to its high transition frequency of 200MHz. The package style is flange mount with through-hole terminals in a rectangular shape, making it suitable for various electronic designs.

ISOLATED

2 A

180 V

SINGLE

50

R-PSFM-T3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

200 MHz

BSR41F by Nexperia

BSR41F

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Case Connection: COLLECTOR;

COLLECTOR

1 A

60 V

SINGLE

50

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

PBSS5350Z/ZLF by Nexperia

PBSS5350Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

PBSS5540Z/ZLF by Nexperia

PBSS5540Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: IEC-60134;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PBSS5540Z/ZLX by Nexperia

PBSS5540Z/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PZT2907A/ZLF by Nexperia

PZT2907A/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 4;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

PZT2907A/ZLX by Nexperia

PZT2907A/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Reference Standard: IEC-134;

COLLECTOR

.6 A

60 V

SINGLE

100

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-134

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

PZTA44/ZLX by Nexperia

PZTA44/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;

COLLECTOR

.3 A

400 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

IEC-134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

20 MHz

BSR30F by Nexperia

BSR30F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

60 V

SINGLE

10

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

PHPT61002NYCLHX by Nexperia

PHPT61002NYCLHX

Nexperia

PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.

COLLECTOR

2 A

11 pF

100 V

SINGLE

20

MO-235

R-PSSO-G4

e3

1

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

25 W

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

140 MHz

.3 V

2N3716PBFREE by Central Semiconductor

2N3716PBFREE

Central Semiconductor

2N3716PBFREE by Central Semiconductor is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its fast rise and fall times of 400ns.

COLLECTOR

10 A

80 V

SINGLE

30

400 ns

TO-3

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

150 W

400 ns

NO

MATTE TIN OVER NICKEL

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

700 ns

.8 V

2N4237PBFREE by Central Semiconductor

2N4237PBFREE

Central Semiconductor

2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.

3 A

100 pF

40 V

SINGLE

30

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

6 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

2 MHz

.6 V

TIP29CPBFREE by Central Semiconductor

TIP29CPBFREE

Central Semiconductor

TIP29CPBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.7V, hFE of 15, and IC of 1A. Ideal for switching applications, it has a max power dissipation of 30W and operates b/w -65 to 150°C. Its through-hole terminals make it suitable for various electronic devices.

1 A

100 V

SINGLE

15

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

30 W

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

3 MHz

.7 V

2N6107PBFREE by Central Semiconductor

2N6107PBFREE

Central Semiconductor

2N6107PBFREE by Central Semiconductor is a PNP BJT with hFE of 30, VCEO of 70V, and IC of 7A. Ideal for switching applications due to its single configuration and silicon element material. Features flange mount style with through-hole terminals in a rectangular package shape.

COLLECTOR

7 A

70 V

SINGLE

30

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

MJE13005PBFREE by Central Semiconductor

MJE13005PBFREE

Central Semiconductor

MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.

COLLECTOR

4 A

130 pF

400 V

SINGLE

8

900 ns

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

2 W

75 W

700 ns

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

4 MHz

4900 ns

800 ns

1 V

2N3053APBFREE by Central Semiconductor

2N3053APBFREE

Central Semiconductor

2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.

.7 A

15 pF

60 V

SINGLE

50

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

5 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SILICON

100 MHz

.3 V

ZXTP01500BGQTA by Diodes Incorporated

ZXTP01500BGQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .15 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY

COLLECTOR

.15 A

500 V

SINGLE

80

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

60 MHz

BCP68-25H6327 by Infineon Technologies

BCP68-25H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

2DA1971Q-7 by Diodes Incorporated

2DA1971Q-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 75 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;

HIGH RELIABILITY

COLLECTOR

.5 A

400 V

SINGLE

140

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

75 MHz

ZXTN19020DZQTA by Diodes Incorporated

ZXTN19020DZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Collector Current (IC): 7.5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

COLLECTOR

7.5 A

20 V

SINGLE

50

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

2SAR587D3TL1 by ROHM

2SAR587D3TL1

ROHM

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

65 pF

120 V

SINGLE

120

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

10 W

YES

GULL WING

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

.2 V

2SB1203T-H by Onsemi

2SB1203T-H

Onsemi

The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

BCP56-16-AU_R2_000A1 by Panjit International

BCP56-16-AU_R2_000A1

Panjit International

Panjit International's BCP56-16-AU_R2_000A1 is a NPN Power BJT with 100V VCE, 1A IC, and 40 hFE. Ideal for AEC-Q101 compliant automotive applications due to its small outline package and high transition frequency of 100MHz.

COLLECTOR

1 A

100 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SILICON

100 MHz