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2STD1360T4

STMicroelectronics

2STD1360T4 by STMicroelectronics

2STD1360T4 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector-emitter voltage of 60V, and operates up to 150 °C. Ideal for compact designs with its surface mount configuration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,564 parts In-Stock

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8,564

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Anansix

USA . 2,438 parts In-Stock

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2,438

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Digiode

USA . 1,096 parts In-Stock

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1,096

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Component Electronics Inc.

Canada . 16 parts In-Stock

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16

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 465 parts In-Stock

1+ parts

$0.069

100+ parts

-

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-

10k+ parts

$0.067

465

$0.069

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-

$0.067

Northwest PG Solutions

USA . 1,689 parts In-Stock

1+ parts

$0.076

100+ parts

-

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$0.067

1,689

$0.076

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-

$0.067

IDEA Electronic Components Group

UK . 1,530 parts In-Stock

1+ parts

$0.713

100+ parts

-

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$0.642

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1,530

$0.713

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$0.642

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MKK Technologies

India . 1,024 parts In-Stock

1+ parts

$1.341

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1,024

$1.341

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DigiPath Technology Company

USA . 1,024 parts In-Stock

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$1.341

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1,024

$1.341

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AZTECH Wire

Italy . 744 parts In-Stock

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$21.800

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744

$21.800

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Component Stockers USA

USA . 324 parts In-Stock

1+ parts

$99.990

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324

$99.990

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Alle Elektronik GmbH

Germany . 4,029 parts In-Stock

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4,029

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Corphita

USA . 1,419 parts In-Stock

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1,419

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Parana Technologies

USA . 379 parts In-Stock

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$0.852

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379

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$0.852

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Overview

Experience unmatched quality and reliability with the 2STD1360T4 from STMicroelectronics, a leader in innovative semiconductor solutions. This NPN power BJT delivers exceptional performance in switching applications, making it ideal for a variety of electronic designs. Its compact size and robust construction ensure seamless integration and durability, empowering your projects with efficiency and longevity. Choose STMicroelectronics for trust and value, and elevate your designs to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures good thermal and mechanical stability, making it suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is well-suited for switching and amplification applications, allowing for efficient signal control.

Configuration: SINGLE

A single configuration simplifies circuit design and provides efficiency in various electronic applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor can handle rapidly changing signals, making it ideal for power management.

Surface Mount: YES

Surface mount technology (SMT) enables compact designs and facilitates automated assembly processes, reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs while maximizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide a stable connection, ensuring reliability during soldering and operation.

No. of Terminals: 2

With only two terminals, this transistor offers simplicity and versatility in circuit configurations.

Maximum Power Dissipation (Abs): 15 W

A maximum power dissipation of 15 W ensures the transistor can handle high power applications without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving designs, perfect for compact electronic devices.

Minimum DC Current Gain (hFE): 160

A minimum DC current gain of 160 indicates strong amplification capabilities, making it effective for signal processing.

Maximum Operating Temperature: 150 °C

With a high operating temperature rating, this transistor is suitable for use in demanding environments.

Maximum Collector-Emitter Voltage: 60 V

The ability to handle up to 60 V allows integration into a variety of electronic systems without risk of breakdown.

Transistor Element Material: SILICON

Silicon as the element material ensures good conductivity and thermal stability, enhancing performance across applications.

Maximum Collector Current (IC): 3 A

With a collector current rating of 3 A, this transistor can effectively control higher loads in power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability, ensuring dependable connections in assembly.

Terminal Position: SINGLE

A single terminal position aids in straightforward layout design, simplifying board layout for engineers.

Case Connection: COLLECTOR

Case connection to the collector ensures effective heat dissipation and enhances overall thermal management.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum reflow time of 30 seconds ensures compatibility with standard soldering processes used in electronic manufacturing.

Peak Reflow Temperature °C: 260

A high peak reflow temperature of 260 °C allows compatibility with lead-free soldering processes, making it environmentally friendly.

Nominal Transition Frequency (fT): 130 MHz

A transition frequency of 130 MHz allows for high-speed switching applications, making it suitable for modern electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STD1360T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2STD1360T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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