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2STD1665-1

STMicroelectronics

2STD1665-1 by STMicroelectronics

2STD1665-1 by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector-emitter voltages of 65V. Ideal for efficient circuit designs with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,687 parts In-Stock

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3,687

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Anansix

USA . 2,726 parts In-Stock

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2,726

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Vyrian

USA . 81 parts In-Stock

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81

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,024 parts In-Stock

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$1.627

100+ parts

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$1.465

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2,024

$1.627

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$1.465

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MKK Technologies

India . 1,246 parts In-Stock

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$3.060

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1,246

$3.060

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DigiPath Technology Company

USA . 1,246 parts In-Stock

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$3.060

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1,246

$3.060

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Northwest PG Solutions

USA . 2,039 parts In-Stock

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2,039

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Parana Technologies

USA . 1,195 parts In-Stock

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$1.946

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1,195

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$1.946

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Corphita

USA . 1,176 parts In-Stock

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1,176

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Native Components

USA . 398 parts In-Stock

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398

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Overview

Unlock the power of efficiency with the 2STD1665-1 from STMicroelectronics, a leader in innovation and reliability. This NPN power transistor excels in switching applications, delivering consistent performance under demanding conditions. With its robust design and exceptional thermal management, it ensures longevity and reliability for your projects. Elevate your designs with this versatile component, perfect for industrial automation, automotive systems, and consumer electronics. Experience superior quality backed by ST's commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material contributes to a lightweight and durable design, ensuring reliability in various applications.

Polarity or Channel Type: NPN

NPN transistors are ideal for switch applications, making them versatile for both low and high power switching.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, reducing complexity in applications.

Transistor Application: SWITCHING

Specially designed for switching applications, this transistor allows for efficient electronic control, enhancing performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy mounting and integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole design ensures stable connections and is ideal for robust applications requiring strong physical support.

No. of Terminals: 3

Three terminals provide essential connection points for ground, collector, and emitter, enabling straightforward circuit designs.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation capacity of 15 W, this transistor is suited for handling substantial energy without overheating.

Package Style (Meter): IN-LINE

The in-line package style allows for organized layouts and efficient use of space in circuit boards.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 enhances performance, making the transistor more effective in amplifying signals.

Maximum Operating Temperature: 150 °C

The capability to operate at high temperatures (up to 150 °C) ensures reliability in demanding environments.

Maximum Collector-Emitter Voltage: 65 V

With a collector-emitter voltage rating of 65 V, this transistor can handle significant voltage levels, making it suitable for high-voltage applications.

Transistor Element Material: SILICON

Silicon as the material offers excellent electrical characteristics and thermal stability, ensuring efficient operation.

Maximum Collector Current (IC): 6 A

Supporting a maximum collector current of 6 A, this device is capable of driving heavier loads effectively.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: SINGLE

A single terminal position results in straightforward circuit integration and easier maintenance.

Case Connection: ISOLATED

Isolated case connection minimizes the risk of short circuits and interference, promoting safe device operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2STD1665-1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2STD1665-1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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