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BCP5516H6327XTSA1

Infineon Technologies

BCP5516H6327XTSA1 by Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

Median Price

$0.426

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$0.693

100+ parts

$0.631

1k+ parts

$0.568

10k+ parts

-

60

$0.693

$0.631

$0.568

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Verical

USA . 49,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

49,000

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-

-

$0.159

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 120 parts In-Stock

1+ parts

$0.658

100+ parts

-

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-

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120

$0.658

-

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Vyrian

USA . 2,482 parts In-Stock

1+ parts

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2,482

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VNN

France . 2,074 parts In-Stock

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2,074

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Rutronik

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.114

10k+ parts

$0.110

2,000

-

-

$0.114

$0.110

Nova Conductors

Japan . 88 parts In-Stock

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88

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 8,486 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

1k+ parts

$0.082

10k+ parts

-

8,486

$0.085

$0.083

$0.082

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Ampacity Inc.

Singapore . 8,392 parts In-Stock

1+ parts

$0.085

100+ parts

-

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8,392

$0.085

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Corphita

USA . 292 parts In-Stock

1+ parts

$0.624

100+ parts

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292

$0.624

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.693

100+ parts

$0.631

1k+ parts

$0.568

10k+ parts

-

60

$0.693

$0.631

$0.568

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Aztec Data Supply Inc.

USA . 833 parts In-Stock

1+ parts

$0.942

100+ parts

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833

$0.942

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Modulus Dynamics

Lithuania . 19,750 parts In-Stock

1+ parts

$1.905

100+ parts

$1.829

1k+ parts

$1.753

10k+ parts

-

19,750

$1.905

$1.829

$1.753

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Corohmni

South Africa . 125 parts In-Stock

1+ parts

$1.999

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125

$1.999

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AZTECH Wire

Italy . 873 parts In-Stock

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$18.470

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873

$18.470

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Argo Parts USA

USA . 3,277 parts In-Stock

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3,277

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Continental Prestige Electronics

USA . 709 parts In-Stock

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709

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Looking for a reliable power transistor for your amplifier applications? Look no further than the BCP5516H6327XTSA1 by Infineon Technologies. With Infineon's reputation for quality and innovation, this NPN transistor offers customers the perfect balance of performance and value. Whether you're designing audio amplifiers or power supplies, this transistor's low VCEsat and high DC current gain ensure efficient operation. Say goodbye to overheating and hello to enhanced reliability with the BCP5516H6327XTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and good insulation for the transistor, ensuring reliable performance in various conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other applications, making this transistor versatile and widely compatible.

Configuration: SINGLE

Simplifies the circuit design and allows for easy integration into different systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high performance and efficiency in amplification tasks.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Maximum VCEsat: 0.5 V

Low VCEsat reduces power losses and improves efficiency, making this transistor suitable for applications where power dissipation is critical.

Package Shape: RECTANGULAR

Compact design saves space on the circuit board and allows for efficient layout of components.

Terminal Form: GULL WING

Provides secure and reliable connections, ensuring stable performance in various operating conditions.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation rating, this transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package reduces space requirements and allows for high-density mounting on circuit boards.

Minimum DC Current Gain (hFE): 40

High DC current gain ensures amplification accuracy and stability in various operating conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in both extreme hot and cold environments.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides flexibility in circuit design and allows for use in a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in transistor operation.

Maximum Collector Current (IC): 1 A

With a high collector current rating, this transistor can handle high current loads in various applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability in connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting and connection options in circuit designs.

Case Connection: COLLECTOR

Collector case connection simplifies circuit layout and improves thermal management for better performance.

Reference Standard: AEC-Q101

Complies with automotive quality standards, ensuring reliability and durability for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching and high-frequency operation, making this transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5516H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

TR, 7 INCH; 1000

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5516H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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