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BCP6925H6327XTSA1

Infineon Technologies

BCP6925H6327XTSA1 by Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$0.226

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 358,144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$2.210

358,144

-

-

-

$2.210

Rochester

USA . 270,104 parts In-Stock

1+ parts

-

100+ parts

$0.226

1k+ parts

$0.187

10k+ parts

$0.167

270,104

-

$0.226

$0.187

$0.167

Verical

USA . 233,144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.209

233,144

-

-

-

$0.209

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 357 parts In-Stock

1+ parts

$0.160

100+ parts

-

1k+ parts

-

10k+ parts

-

357

$0.160

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.239

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.239

-

-

-

Vyrian

USA . 5,471 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

5,471

-

-

-

-

VNN

France . 4,128 parts In-Stock

1+ parts

-

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4,128

-

-

-

-

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.898

10k+ parts

$0.816

2,000

-

-

$0.898

$0.816

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 196,977 parts In-Stock

1+ parts

$0.143

100+ parts

-

1k+ parts

-

10k+ parts

-

196,977

$0.143

-

-

-

Corphita

USA . 822 parts In-Stock

1+ parts

$0.151

100+ parts

-

1k+ parts

-

10k+ parts

-

822

$0.151

-

-

-

Modulus Dynamics

Lithuania . 16,359 parts In-Stock

1+ parts

$0.217

100+ parts

$0.208

1k+ parts

$0.200

10k+ parts

-

16,359

$0.217

$0.208

$0.200

-

AZTECH Wire

Italy . 978 parts In-Stock

1+ parts

$11.760

100+ parts

-

1k+ parts

-

10k+ parts

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978

$11.760

-

-

-

Eastek

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.461

10k+ parts

-

6,000

-

-

$0.461

-

Perfect Parts

USA . 2,240 parts In-Stock

1+ parts

-

100+ parts

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2,240

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-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.234

1k+ parts

$0.227

10k+ parts

$0.222

1,000

-

$0.234

$0.227

$0.222

Overview

Unlock the power of innovation with the BCP6925H6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for amplifier applications. With a maximum collector-emitter voltage of 20V and a minimum DC current gain of 160, this PNP transistor offers reliability and efficiency like no other. Say goodbye to outdated technology and hello to seamless performance with the BCP6925H6327XTSA1. Elevate your projects to new heights with this cutting-edge solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility in circuit design.

Configuration: SINGLE

Simplified design with a single transistor in the package, easy to implement in various amplifier circuits.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, offering high performance and reliable signal amplification.

Surface Mount: YES

Designed for surface mount technology, making it easier to integrate into compact electronic devices.

Package Shape: RECTANGULAR

Space-efficient design for better PCB layout and placement in tight spaces.

Terminal Form: GULL WING

Facilitates easier soldering and mounting on the PCB, enhancing the overall assembly process.

No. of Terminals: 4

Provides necessary connections for the transistor in a compact form factor, suitable for small electronic devices.

Package Style (Meter): SMALL OUTLINE

Compact form factor suitable for portable electronic devices or space-constrained applications.

Minimum DC Current Gain (hFE): 160

Ensures consistent and stable amplification of signals with high gain, improving overall circuit performance.

Maximum Collector-Emitter Voltage: 20 V

Allows for safe operation within specified voltage limits, protecting the transistor from potential damage.

Transistor Element Material: SILICON

Provides reliable and consistent performance in a wide range of operating conditions, ideal for various applications.

Maximum Collector Current (IC): 1 A

Capable of handling high current loads, making it suitable for power amplification applications.

Terminal Finish: TIN

Ensures good electrical conductivity and solderability for reliable connections in the circuit.

Terminal Position: DUAL

Provides flexibility in circuit layout and allows for easy connection to external components.

Case Connection: COLLECTOR

Optimal connection for improved heat dissipation and efficient performance of the transistor.

Nominal Transition Frequency (fT): 100 MHz

Capable of operating at high frequencies, suitable for RF amplification and other high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP6925H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP6925H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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