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BCP68

Onsemi

BCP68 by Onsemi

Onsemi's BCP68 is a NPN Power BJT with 1A IC, 20V VCE, and 1.5W Pd. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it has hFE of 60 and matte tin finish on its dual-positioned terminals.

Median Price

$0.056

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

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$0.046

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$0.046

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Farnell

UK . 117,750 parts In-Stock

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$0.084

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Rochester

USA . 111,750 parts In-Stock

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$0.056

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$0.041

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DigiKey

USA . 111,750 parts In-Stock

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Verical

USA . 111,750 parts In-Stock

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$0.051

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Flip Electronics (Authorized)

USA . 80,000 parts In-Stock

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Chip1Stop

Japan . 1 parts In-Stock

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Digiode

USA . 4,700 parts In-Stock

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$0.044

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Nova Conductors

Japan . 57 parts In-Stock

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Bristol Electronics

USA . 7,437 parts In-Stock

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$0.487

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$0.244

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$0.098

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$0.073

7,437

$0.487

$0.244

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$0.073

Component Electronics Inc.

Canada . 1,900 parts In-Stock

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$0.540

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$0.350

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American Microsemiconductor Inc.

USA . 2,543 parts In-Stock

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USA . 80,000 parts In-Stock

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Dan-Mar Components

USA . 39,437 parts In-Stock

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Rebound Electronics

UK . 15,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,475 parts In-Stock

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Tech-Mark Corp

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Prism Electronics

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Cogito LLC

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PC Components Company LLC

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Resion

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ECAB

Sweden . 900 parts In-Stock

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900

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LWI Electronics Inc

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Standard Data Resources

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ACDS - Activité Composants Distribution Service

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Anansix

USA . 433 parts In-Stock

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Lighthouse Electronics, Inc.

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Connector Distribution Corp

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Right Parts Inc.

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Goldney Electronics S.L.

Spain . 84 parts In-Stock

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Italy . 30 parts In-Stock

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GES GmbH

Germany . 19 parts In-Stock

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LittleDiode

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Corphita

USA . 5,772 parts In-Stock

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$0.041

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Corohmni

South Africa . 345 parts In-Stock

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Component Stockers USA

USA . 135,414 parts In-Stock

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$0.040

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Netroflash

USA . 1,000 parts In-Stock

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$0.057

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$0.060

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AZTECH Wire

Italy . 2,628 parts In-Stock

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Continental Prestige Electronics

USA . 125,750 parts In-Stock

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Modulus Dynamics

Lithuania . 20,103 parts In-Stock

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$0.079

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$0.076

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$0.073

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Andel Nordic

Denmark . 50 parts In-Stock

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$2.630

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$1.838

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$1.838

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$1.838

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,663 parts In-Stock

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Kepictronics

USA . 18,362 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 16,000 parts In-Stock

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Lixinc

USA . 13,255 parts In-Stock

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A-Z Elektronik GmbH

Germany . 9,100 parts In-Stock

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Computer Components Inc. - USA

USA . 5,892 parts In-Stock

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UNI Independent Distributors

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TANS Electronics

Latvia . 5,614 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Kulean Microsystems

USA . 2,169 parts In-Stock

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Problanco Electronics

Mexico . 1,669 parts In-Stock

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SupplyDigital Components

Austria . 1,017 parts In-Stock

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Assy Fe

Spain . 1,016 parts In-Stock

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UHIMA Technologies

Türkiye . 900 parts In-Stock

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900

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Cyclops Electronics Ltd (Excess)

UK . 743 parts In-Stock

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S.R.D Solutions

India . 500 parts In-Stock

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Overview

Enhance your electronic projects with the reliable BCP68 Power Bipolar Junction Transistor by Onsemi. Known for their high-quality components, Onsemi delivers exceptional performance and durability in every product. The BCP68 is a versatile NPN transistor perfect for amplifier applications, offering a maximum collector-emitter voltage of 20V and a maximum collector current of 1A. With its compact design and maximum power dissipation of 1.5W, this transistor is ideal for a wide range of surface mount applications. Trust Onsemi to provide top-notch components that bring value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers excellent durability and thermal resistance, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other applications, providing efficient signal amplification.

Configuration: SINGLE

Single configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal processing.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor for space-constrained applications.

Terminal Form: GULL WING

Gull wing terminals offer secure mechanical connections during soldering, enhancing reliability.

No. of Terminals: 4

Simple four-terminal configuration for easy connection and integration in circuits.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB, ideal for compact device designs.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures efficient signal amplification in amplifier circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various temperature conditions.

Maximum Collector-Emitter Voltage: 20 V

Collector-emitter voltage rating ensures safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon transistor element offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 1 A

High collector current rating enables the transistor to handle large load currents.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and connections.

Case Connection: COLLECTOR

Collector case connection facilitates easy thermal management and heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

This spec ensures that the transistor can withstand peak reflow temperatures for a sufficient duration during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for reliable soldering during PCB assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP68 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BCP68 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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