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BCP68,115

NXP Semiconductors

BCP68,115 by NXP Semiconductors

NXP Semiconductors' BCP68,115 is a NPN Power BJT with 1A IC and 20V VCE. It has a hFE of 60, fT of 40MHz, and can handle up to 1.5W power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.

Median Price

$0.071

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Rochester

USA . 83,980 parts In-Stock

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TTI

USA . 81,000 parts In-Stock

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Farnell

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Arrow

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Verical

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EBV Elektronik

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Chip1Stop

Japan . 2,735 parts In-Stock

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Digiode

USA . 2,366 parts In-Stock

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Nova Conductors

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Bristol Electronics

USA . 530 parts In-Stock

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NAC Semi

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IBS Electronics

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Vyrian

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LIBRA Elektronik GmbH

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Rebound Electronics

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Micros

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Partservice

France . 867 parts In-Stock

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Micros sp.j. W. Kędra i J. Lic

Poland . 867 parts In-Stock

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LWI Electronics Inc

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Ampacity Inc.

Singapore . 31,599 parts In-Stock

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Corphita

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Netroflash

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AZTECH Wire

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Component Stockers USA

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Overview

Discover the powerful performance and reliability of the BCP68,115 by NXP Semiconductors. This NPN Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector current of 1A and a minimum DC current gain of 60. With a compact small outline package and peak reflow temperature of 260°C, this transistor ensures efficient operation in a variety of electronic devices. Trust NXP Semiconductors for top-quality components that deliver consistent results, making the BCP68,115 a smart choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides good protection and durability to the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile and suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can provide efficient and reliable performance in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and making assembly easier.

Package Shape: RECTANGULAR

The rectangular shape of the package offers easy mounting and handling during installation.

Terminal Form: GULL WING

The gull wing terminal form provides good soldering connection and reliable electrical contact.

No. of Terminals: 4

With 4 terminals, this transistor offers flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 1.5 W

The high maximum power dissipation rating allows the transistor to handle higher power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and contributes to a compact overall design.

Maximum Power Dissipation Ambient: 1.5 W

The high maximum power dissipation in ambient conditions ensures reliable performance even in elevated temperatures.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand high temperature environments and maintain performance.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon is a common and reliable transistor element material known for its stable electrical properties and performance.

Maximum Collector Current (IC): 1 A

The maximum collector current of 1 A allows the transistor to handle higher current loads in the circuit.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: DUAL

The dual terminal position offers versatility in circuit design and connection options.

Case Connection: COLLECTOR

The case connection at the collector terminal facilitates easy and efficient thermal management for the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures efficient and reliable soldering during installation.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for effective soldering and secure bonding during assembly.

Nominal Transition Frequency (fT): 40 MHz

With a high nominal transition frequency, this transistor can switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP68,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP68,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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