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BCP69,135

NXP Semiconductors

BCP69,135 by NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 1.4 W; Maximum Collector Current (IC): 1 A;

Median Price

$0.158

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3,877 parts In-Stock

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$1.310

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Rochester

USA . 19,200 parts In-Stock

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$0.165

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$0.137

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$0.122

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$0.137

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Verical

USA . 19,200 parts In-Stock

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$0.152

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Arrow

USA . 4,000 parts In-Stock

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$0.073

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$0.073

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Digiode

USA . 2,187 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Chip Stock

USA . 132,000 parts In-Stock

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VNN

France . 5,953 parts In-Stock

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TME

Poland . 4,000 parts In-Stock

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Vyrian

USA . 3,985 parts In-Stock

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Anansix

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Corphita

USA . 2,620 parts In-Stock

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$0.056

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Component Stockers USA

USA . 20,502 parts In-Stock

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Continental Prestige Electronics

USA . 3,340 parts In-Stock

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Argo Parts USA

USA . 3,013 parts In-Stock

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AZTECH Wire

Italy . 7,390 parts In-Stock

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Ampacity Inc.

Singapore . 11,968 parts In-Stock

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Microchip USA

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$0.701

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Corohmni

South Africa . 239 parts In-Stock

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UNI Independent Distributors

Spain . 7,575 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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Glotronic Ltd.

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Supply Digital

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP69,135 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP69,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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